Abstract: The invention relates to a device for measuring the dose delivered through a radiosensitive film under exposure to ionizing radiations, to a system comprising such device and to the use of such device. More particularly, the device comprises a reflection film; at least one light source; a radiosensitive film; and an optical sensor system comprising a 2-D array of one or more photoresistor units and/or semiconductor units. The present invention also relates to a system comprising the device previously described; a readout integrated circuit unit connected to the optical sensor system of the device; and a processing unit connected to the readout integrated circuit. The present invention also relates to the use of a device as previously described.

Abstract: A dosimeter includes a substrate and a plurality of nanowire pairs located on the substrate. The plurality of nanowire pairs simulate a plurality of human chromosome pairs. A method of determining an effect of delivering ionizing radiation with a dosimeter having a substrate and a plurality of nanowire pairs located on the substrate, wherein the plurality of nanowire pairs simulate a plurality of human chromosome pairs is provided. The method includes the steps of delivering ionizing radiation to the plurality of nanowire pairs; acquiring information relating to the ionizing radiation; and determining, from the information, the effect of the delivered radiation on the plurality of nanowire pairs.

Abstract: The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof.