Abstract: According to some aspects, a method of operating an automatic test system comprising a plurality of paths and programmed with a test pattern is provided. One such method comprises executing vectors in the test pattern with circuitry comprising a plurality of paths, the executing comprising upon processing, in a first of the plurality of paths, the operation portion of a vector specifying an operation capable of generating a branch in the flow of execution of the vectors in the test pattern to a non-sequential location in the test pattern, initiating processing of the test pattern in a second of the plurality of paths from the non-sequential location. Some aspects include a system for executing instructions comprising a plurality of paths comprising control circuitry to initiate processing of operation portions from sequential locations of a memory within an available path of the plurality of paths.

Abstract: A secure document comprises a pliable fabric comprising human-readable information. The secure document further comprises a memory attached to the pliable fabric in which machine-readable information about the secure document is stored. The secure document further comprises an interface attached to the pliable fabric and coupled to the memory that, when a reader device reads the secure document, transmits at least a portion of the machine-readable information stored in the memory to the reader device.

Abstract: Film thickness measurement systems and methods are provided that utilize a signal generator having a Gunnplexer design and a resonant frequency detector to correlate the shift in resonant frequency experienced by a resonant cavity having one face abutting a test object. The shift is resonant frequency is determinative of a linear or near linear correlation between film thickness and the resonant frequency shift.

Abstract: Provided is a data storage media has an insulating layer on a doped semiconductor layer, with data recorded thereon as a pattern of pits burned through the insulating layer. A read head for use with this storage media has an array of doped-silicon microprobes in contact with the data storage media, each microprobe of the array is supported by a springy cantilever. As each microprobe nears the substrate a diode junction is formed between the microprobe and the doped semiconductor layer of the media. Conductivity of the junction thus formed is electronically sensed to provide an electronic data stream.

Abstract: A method of performing a read operation from a first magnetic random access memory (AM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

Abstract: A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory element, and measuring a second current provided to the column of interest.

Abstract: A storage device includes a storage medium and a probe having a tip and a first magnetic element. The tip of the probe is adapted to form a dent in the storage medium. The storage device further has a second magnetic element, where the first and second magnetic elements are adapted to interact magnetically to indicate a storage state.

Abstract: A storage device includes an electrically conductive storage medium and a probe having a tip that is electrically conductive. The tip is electrically contacted to the storage medium and is adapted to form a dent in the storage medium. The tip is also adapted to cooperate with the storage medium to provide a variable resistance based on whether the tip is engaged in the dent.

Abstract: A storage device includes plural groups of memory cells, wherein the memory cells comprise magnetoresistive elements. Each group includes a transistor, and the memory cells of each group include a first set of parallel connected memory cells that are connected to a node of the transistor. The storage device further includes a sensing device to detect a state of a memory cell in a selected one of the groups.

Abstract: A storage device includes a storage medium and a probe having a tip and a first plate. The tip of the probe is adapted to form a dent in the storage medium to represent a state of a data bit. The storage device also includes a second plate, where the first plate and second plate cooperate to form a variable capacitance that varies between different capacitance values depending on whether the tip of the probe is engaged in the dent.

Abstract: A storage device includes a probe, and a substrate comprising a storage medium and heating elements. The heating elements area adapted to heat respective regions of the storage medium to form perturbations in the respective regions of the storage medium, and the probe is adapted to detect the perturbations.

Abstract: A storage device includes a probe having a tip, the tip comprising a first portion and a second portion. The storage device also includes a storage medium having a surface, where the tip of the probe is adapted to form a dent in the storage medium. The second portion of the tip is electrically contacted to the surface of the storage medium in response to the tip being engaged in the dent, and the second portion of the tip is spaced apart from the surface of the storage medium in response to the first portion being engaged on the surface of the storage medium and not engaged in the dent.

Abstract: A storage device includes a probe having plural tips, and a storage medium having a surface. At least a first one of the tips is adapted to form a dent in the storage medium, and at least a second one of the tips is adapted to be electrically contact the surface of the storage medium in response to the first tip being engaged in the dent. The second tip is electrically isolated from the storage medium in response to the first tip being engaged on the surface of the storage medium and not being engaged in the dent.

Abstract: A secure document comprises a pliable fabric comprising human-readable information. The secure document further comprises a memory attached to the pliable fabric in which machine-readable information about the secure document is stored. The secure document further comprises an interface attached to the pliable fabric and coupled to the memory that, when a reader device reads the secure document, transmits at least a portion of the machine-readable information stored in the memory to the reader device.

Abstract: Film thickness measurement systems and methods are provided that utilize a signal generator having a Gunnplexer design and a resonant frequency detector to correlate the shift in resonant frequency experienced by a resonant cavity having one face abutting a test object. The shift is resonant frequency is determinative of a linear or near linear correlation between film thickness and the resonant frequency shift.

Abstract: A method for determining the memory element values is disclosed. In some embodiments the method may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.

Abstract: A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.

Abstract: A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

Abstract: A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.

Abstract: A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.