Abstract: A light-emitting diode comprising: a first electrode; a first layer of semiconductor doped to a first conductivity type; a second layer of semiconductor doped to a second conductivity type; a region of radiative recombination arranged between, or at the interface of, the first and second layers; a third layer of semiconductor doped to the second conductivity type; a fourth semiconductor layer arranged between the second and third layers; a second electrode arranged against a side face of the third layer and against only part of a side face of the fourth layer; and wherein the fourth layer forms, in relation to the third layer, an energy barrier of at least 100 MeV.

Abstract: A light-emitting diode manufacturing method, including the successive steps of: a) forming an active layer including a stack of multiple quantum wells, each quantum well including a layer made of a semiconductor alloy; b) forming a trench for singularizing the diode, the trench crossing the active layer; and c) applying to the sides of the active layer, at the level of the lateral walls of the trench, a chemical treatment capable of etching a first component of the semiconductor alloy selectively over at least another component of the semiconductor alloy, wherein the bandgap width of the semiconductor alloy is a function of the concentration of the first component in the alloy.

Abstract: A diode includes a stack of semiconductor layers and an active area arranged within the stack. The stack includes a lateral surface. The diode includes a first passivation layer and a second passivation layer, the first passivation layer being in contact with the lateral surface, and the second passivation layer being in contact with the lateral surface. The second passivation layer is formed partially on the first passivation layer.