Abstract: A system and a method for processing multi-linear image data by measuring a relative oscillatory motion from a first-imaged array of the multi-linear optical array to a second-imaged array of the multi-linear optical array as a first function in time domain via image correlation; transforming the first function from the time domain to a second function in frequency domain; converting real and the imaginary parts of the second function to polar coordinates to generate a magnitude and a phase; correcting the polar coordinates from the second function in the frequency domain to generate a third function; converting the third function to rectangular coordinates to generate a fourth function in the frequency domain; and transforming the fourth function from the frequency domain to a fifth function in the time domain.

Abstract: A system and a method for processing multi-linear image data by measuring a relative oscillatory motion from a first-imaged array of the multi-linear optical array to a second-imaged array of the multi-linear optical array as a first function in time domain via image correlation; transforming the first function from the time domain to a second function in frequency domain; converting real and the imaginary parts of the second function to polar coordinates to generate a magnitude and a phase; correcting the polar coordinates from the second function in the frequency domain to generate a third function; converting the third function to rectangular coordinates to generate a fourth function in the frequency domain; and transforming the fourth function from the frequency domain to a fifth function in the time domain.

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth between etching for an alternate phase shift photomask in a semiconductor photomask processing system. The apparatus for measuring the etch depth of a substrate in an etch processing system comprises a measurement cell coupled to a mainframe of the etch processing system, and an etch depth measurement tool coupled to the bottom of the measurement cell, wherein an opening at the bottom of the measurement cell allows light beams to pass between the etch depth measurement tool and the substrate. The embodiments of the invention also relate to the method of preparing an alternate phase shift mask by partially etching the quartz substrate to an initial etch depth, followed by measuring the etch depth with an integrated measurement tool. The substrate is then etched and measured repeatedly until the targeted etch depth has been reached.