Abstract: A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.

Abstract: A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.

Abstract: A production process for protecting the surface of compound semiconductor wafers includes providing a multi-wafer epitaxial production system with a transfer and load module, a III-V growth chamber and an insulator chamber. The wafer is placed in the transfer and load module and the pressure is reduced to .ltoreq.10.sup.-10 Torr, after which the wafer is moved to the III-V growth chamber and layers of compound semiconductor material are epitaxially grown on the surface of the wafer.

Abstract: A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.