Patents by Inventor Corey Daniel Overgaard

Corey Daniel Overgaard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
    Publication number: 20010023660
    Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
    Type: Application
    Filed: June 4, 2001
    Publication date: September 27, 2001
    Applicant: MOTOROLA, INC.
    Inventors: Zhiyi Yu, Ravindranath Droopad, Corey Daniel Overgaard, Jamal Ramdani, Jay A. Curless, Jerald A. Hallmark, William J. Ooms, Jun Wang
  • Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
    Patent number: 6241821
    Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
    Type: Grant
    Filed: March 22, 1999
    Date of Patent: June 5, 2001
    Assignee: Motorola, Inc.
    Inventors: Zhiyi Yu, Ravindranath Droopad, Corey Daniel Overgaard, Jamal Ramdani, Jay A. Curless, Jerald A. Hallmark, William J. Ooms, Jun Wang
  • Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
    Patent number: 6224669
    Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
    Type: Grant
    Filed: September 14, 2000
    Date of Patent: May 1, 2001
    Assignee: Motorola, Inc.
    Inventors: Zhiyi Yi, Ravindranath Droopad, Corey Daniel Overgaard, Jamal Ramdani, Jay A. Curless, Jerald A. Hallmark, William J. Ooms, Jun Wang
  • Method of forming a gate quality oxide-compound semiconductor structure
    Patent number: 6159834
    Abstract: A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.
    Type: Grant
    Filed: February 12, 1998
    Date of Patent: December 12, 2000
    Assignee: Motorola, Inc.
    Inventors: Zhiyi (Jimmy) Yu, Matthias Passlack, Brian Bowers, Corey Daniel Overgaard, Ravindranath Droopad, Jonathan Kwadwo Abrokwah