Abstract: Integrated circuit (IC) devices having dielectric material separating adjacent source and drain bodies. An IC device may include adjacent first and second transistor structures having adjacent source or drain bodies separated by a dielectric material on first and second sidewalls of a first of the source or drain bodies (but only on the sidewall of the second source or drain body adjacent the first source or drain body). An isolation structure of a second dielectric material may be on the first dielectric material, on the first and second source or drain bodies, and between first and second contact structures on the first and second source or drain bodies. The dielectric material on first and second sidewalls of the first source or drain body may be selectively deposited (e.g., conformally) before the second source or drain body is grown.

Abstract: Techniques are provided herein to form an integrated circuit having semiconductor devices with low-k inner dielectric spacers between semiconductor bodies (e.g., nanoribbons, nanowires, or nanosheets). The dielectric spacers may include any suitable low-k dielectric material. Additionally, the inner dielectric spacers may be formed after the formation of source or drain regions, which improves the stress profile of the source or drain regions against the semiconductor bodies. In one such example, semiconductor bodies extend in a first direction between source or drain regions and a gate structure extends in a second direction over the semiconductor bodies between the source or drain regions. Inner spacers separate the gate structure from the source or drain regions along the first direction. The inner spacers may include a low-k dielectric material, such as silicon dioxide. In some examples, the inner spacers extend outwards beyond the ends of the semiconductor bodies along the first direction.

Abstract: Described herein are nanoribbon transistors with bilayer cavity spacers deposited near the ends of the nanoribbons, including between the ends of adjacent nanoribbons. The cavity spacers include a first, inner layer next to the gate stack, and a second, outer layer next to the source or drain. The inner layer may be a low-k dielectric material, while the outer layer may be a high-k dielectric material.