Abstract: An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate (200); a layer of SiO2 (210) over the surface of said substrate; and a layer of BST (220) deposited over the SiO2 layer (210). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize frequency response or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated high-efficiency, low-loss microwave components that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The growth of the monocrystalline oxide film for accommodating buffer layer (24) is achieved through an automated oxygen delivery system (200) that controls a variety of oxygen control parameters, such as pressure control, ramp control, and flow control. The oxygen delivery system (200) is preferably a dual stage pressure control system (204, 206) with the ability to precisely control the oxygen profile in the growth chamber.

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers (26). An accommodating buffer layer comprises a layer of monocrystalline oxide (24) spaced apart from a silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The silicon substrate (22) is intentionally “mis-cut” off a major axis to provide a surface that facilitates two dimensional growth of the low-defect monocrystalline material layer (26).

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to control the stoichiometry of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract: The present invention provides semiconductor structures and methods for forming semiconductor structures which include monocrystalline oxide films exhibiting both high dielectric constants and low leakage current densities. In accordance with various aspects of the invention, a semiconductor structure includes a monocrystalline semiconductor substrate and one or more stoichiometrically graduated monocrystalline oxide layers. The stoichiometrically graduated monocrystalline oxide layer may include a perovskite material, such as an alkaline-earth metal titanate. Semiconductor devices fabricated in accordance with aspects of the present invention exhibit a high dielectric constant as well as a reduced leakage current density.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract: High quality ionicly-bonded semiconductor materials can be grown overlying covalently-bonded substrates (22), such as large silicon wafers, by utilizing a stable template layer (24). The template layer is formed of material consisting of alkaline earth metal, alkaline earth metal silicide, alkaline earth metal silicate and/or Zintl-type phase material. A high-quality ionicly-bonded semiconductor material (26) may then be grown over the template layer.

Abstract: A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of a metal oxide-nitride such as MnOm−xNx, wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements and m and n are integers. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density and improved chemical, thermal, and electrical stability over conventional metal oxides.