Abstract: A memory cell comprising an inverting stage, an access transistor coupled between a data line and an input of the inverting stage, the access transistor being responsive to a control signal for selectively coupling the data line and the inverting stage input, a feedback transistor coupled to the inverting stage input and being responsive to an output of the inverting stage for latching the inerting stage in a first logic state and whereby the cell is maintained in a second logic state by a leakage current flowing through the access transistor which is greater than a current flowing through the feedback transistor.

Abstract: A memory cell comprising an inverting stage, an access transistor coupled between a data line and an input of the inverting stage, the access transistor being responsive to a control signal for selectively coupling the data line and the inverting stage input, a feedback transistor coupled to the inverting stage input and being responsive to an output of the inverting stage for latching the inerting stage in a first logic state and whereby the cell is maintained in a second logic state by a leakage current flowing through the access transistor which is greater than a current flowing through the feedback transistor.

Abstract: A single chip display processor comprised of a dynamic random access memory (DRAM) for storing at least one of graphics and video pixel data, a pixel data unit (PDU) for processing the pixel data, integrated in the same integrated circuit (IC) chip as the DRAM, the IC chip further comprising a massively parallel bus for transferring blocks of pixel data at the same time from the DRAM to the PDU, whereby the PDU can process the blocks of pixel data for subsequent display of processed pixel data.

Abstract: A circuit which responds to the application of a pulse to its input (6) by generating a pulse at its output (3), the output pulse having a minimum duration T and being extended by the remaining length of the input pulse should the input pulse be still present at the end of the time T, comprises a pair of semiconductor switches (1,2) connecting the output (3) to points (5,4) carrying respective logic levels. The input pulse closes the first switch (1) and also inhibits a gate circuit (9). The resulting logic level on the output (3) closes the second switch (2) after delay by T in a delay circuit (13) and transmission through the gate circuit (9), thereby restoring the original logic level. The instant when this occurs coincides with the presence of the delayed output pulse at the output (14) of the delay circuit and the absence of the pulse at the arrangement input (6). A hold circuit circuit (15) may be provided for holding the logic level currently present at the output (3).

Abstract: An addressable memory unit has address input buffer circuits which output a pair of output connections on which, in read or write mode, two signals which are complementary to one another are present but which may also adopt equal values in such a manner as to cause a predecoder and line selector to select all or none of the selection lines controlling the cells of the memory accessed.

Abstract: Random access memory unit having a plurality of test modes, which is constructed as an integrated circuit and which does not include specific input/output pins to define and to command the passage to test mode. This unit is equipped with means (1) for detecting whether a predefined sequence of logic signals, which is not contained, within a set of sequences which are normally used, but the voltages of which are nevertheless included within the range of voltages which are specified for such signals, is supplied to certain inputs (CE, WE, AO), and for placing the unit in-test mode when such a sequence has been detected. In order to define the nature of the test to be performed, address input terminals, (A1-A8) of the unit are connected to a test mode decoding circuit (2), in which the data applied to the said input terminals are used as data defining the nature of the test to be performed.