Abstract: A method for fabricating patterned resist masks. Firstly, a photoresist film is applied on a semiconductor substrate in a customary manner, which photoresist film is then exposed by means of customary techniques. In the development step, a rinsing medium containing a cationic surfactant is used. If the patterned resist is dried after development, the sidewalls of the resist webs are rendered hydrophobic by the cationic surfactant, so that the contact angle can be increased to values of approximately 90°, reducing capillary forces acting on the webs of the patterned resist to approximately zero. As a result, even in the case of single-layer resist films, the line width of the webs can be reduced without a line collapse being observed.

Abstract: A polyurethane and/or polyurethane urea elastomer in the form of a thermostable processable melt, which is immediately processable or which, after cooling and storing, can be remelted and processed. The elastomer is produced by a polyaddition or build-up reaction of longer chain diols with diisocyanate, chain extenders and a polar gelling and/or melting aid for the formation of the thermostable processable melt. A method for manufacturing a polyurethane and/or polyurethane-urea elastomer in the form of a thermally stable processable melt which may be processed immediately or after cooling and storage, being remeltable and reprocessable. The method comprises the steps of: converting n-Mol of a polymeric diol to form a prepolymer with about 1.1 to about 10.0 n-Mol of a diisocyanate at about 50.degree. C. to about 150.degree. C.