Abstract: An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias. A second set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid greater than or equal to a prescribed dimension sorted by the sorting structure. A third set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid less than the prescribed dimension. The apparatus includes first and second seals covering the first and second sides, respectively.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A multi-layer wafer and method of manufacturing such wafer are provided. The method comprises applying a stress compensating oxide layer to each of two heterogeneous wafers, applying at least one bonding oxide layer to at least one of the two heterogeneous wafers, chemical-mechanical polishing the at least one bonding oxide layer, and low temperature bonding the two heterogeneous wafers to form a multi-layer wafer pair. The multi-layer wafer comprises two heterogeneous wafers, each of the heterogeneous wafers having a stress compensating oxide layer and at least one bonding oxide layer applied to at least one of the two heterogeneous wafers. The two heterogeneous wafers are low temperature bonded together to form the multi-layer wafer.

Abstract: An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias. A second set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid greater than or equal to a prescribed dimension sorted by the sorting structure. A third set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid less than the prescribed dimension. The apparatus includes first and second seals covering the first and second sides, respectively.

Abstract: An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias. A second set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid greater than or equal to a prescribed dimension sorted by the sorting structure. A third set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid less than the prescribed dimension. The apparatus includes first and second seals covering the first and second sides, respectively.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The optoelectronic device is excitable by light at an application wavelength. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The surrogate substrate has a volume of substrate removed therefrom to form a via. Light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The optoelectronic device is excitable by light at an application wavelength. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The surrogate substrate has a volume of substrate removed therefrom to form a via. Light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.

Abstract: After bonding a second substrate to a first substrate through a bonded material layer to provide a bonded structure, through dielectric via (TDV) openings of different depths are concurrently formed in the bonded structure by performing a single anisotropic etch using fluorine-deficient species that are obtained by dissociation of fluorocarbon-containing molecules.

Abstract: A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: After bonding a second substrate to a first substrate through a bonded material layer to provide a bonded structure, through dielectric via (TDV) openings of different depths are concurrently formed in the bonded structure by performing a single anisotropic etch using fluorine-deficient species that are obtained by dissociation of fluorocarbon-containing molecules.

Abstract: An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias. A second set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid greater than or equal to a prescribed dimension sorted by the sorting structure. A third set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid less than the prescribed dimension. The apparatus includes first and second seals covering the first and second sides, respectively.

Abstract: A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.