Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: This invention relates to an improved process for the nano- or microstructuring of a substrate by applying a mesogen or a mesogenic mixture on top of the substrate. The improvement is that the mesogen or mesogenic mixture is contact printed unto the target substrate, said substrate having an alignment layer.

Abstract: The invention deals with a process for the preparation of a polymeric relief structure via electromagnetic radiation. In the process a compound is used that reduces the interfacial tension of the coated substrate. As a result the aspect ratio as well as the curvature of the surface are enhanced, and therefore are beneficial for optical components and for replication purposes.

Abstract: A current integrator for generating an output voltage (Vo) in response to an input current (Ii) to be integrated. The input current is applied to an integration capacitor via a current-current converter. This enables one end of the integration capacitor to be connected to a fixed voltage and to be implemented by means of a MOS transistor which occupies a comparatively small area. A further area reduction is possible by making the current gain (K) of the current-current converter smaller than 1.