Abstract: Substrates for an electronic circuit and device manufacturing methods are disclosed. According to an embodiment, the substrate comprises: a silicon or germanium wafer impregnated with impurities that form one or more deep energy levels within the band gap of the material forming the wafer, wherein at least one of said deep energy levels is positioned at least 0.3 eV away from the conduction band if the level is a donor level or at least 0.3 eV away from the valence band if the level is an acceptor level; and a device layer formed on a surface of said wafer, said device layer comprising electronically functional components formed in a layer of Periodic Table Group III-V or II-VI material. The wafer may be formed from Cz silicon or Cz germanium, for example.

Abstract: Coat hanger made of plastic 81), provided with a steel hook (4). The steel hook (4) can be rotated inside the plastic (1), without deteriorating the plastic (1). Between the hook (4) and the platic (1) a well-defined frictional torque is present, due to which a previously determined torque is necessary for turning the hook (4). The friction is realised by deforming the pin-shaped part (7) of the hook (4) which is situated inside the plastic (1).

Abstract: A glasshouse construction, comprising a number of uprights which jointly support a light-transmitting roof construction and which, with the aid of girders, are connected in rows, and at least one screen construction, arranged between two successive rows. The screen construction is provided with a screen which is movable between a retracted position in which the screen is located as a package along a row of uprights and an extended position in which the screen extends substantially flat between two successive rows of uprights. At least one of the girders comprises a section having an open cross section, while in retracted position of the screen, the package formed by the screen is at least partly surrounded by the section.