Abstract: The invention provides a lighting device for providing light, the lighting device comprising a closed chamber with a light transmissive window and a light source configured to provide light source radiation into the chamber, wherein the chamber further encloses a wavelength converter configured to convert at least part of the light source radiation into wavelength converter light, wherein the light transmissive window is transmissive for the wavelength converter light, wherein the wavelength converter comprises luminescent quantum dots which upon excitation with at least part of the light source radiation generate at least part of the wavelength converter light, and wherein the closed chamber comprises a filling gas comprising one or more of helium gas, hydrogen gas, nitrogen gas or oxygen gas, the filling gas having a relative humidity at 19° C. of at least 5%.

Abstract: The present invention relates to a light emitting device (100) comprising: a substrate (102); a light emitting diode structure (106) arranged on the substrate (102), the diode structure (106) comprising a first semiconducting layer (108), an active region (110) and a second semiconducting layer (112), wherein a light output surface of the diode structure comprises a plurality of protruding surface structures (104) each having a peak height, a sidewall slope (122) and orientation in relation to the substrate, the plurality of protruding structures (104) comprising a first set and a second set of protruding surface structures, the first set and second set of protruding surface structures differing by at least one of the peak height, sidewall slope and orientation in relation to the substrate. The invention also relates to a method for manufacturing a light emitting device where the protruding surface structures are formed by imprint lithography to form a three-dimensional pattern and subsequent etching.

Abstract: The invention provides a lighting device for providing light, the lighting device comprising a closed chamber with a light transmissive window and a light source configured to provide light source radiation into the chamber, wherein the chamber further encloses a wavelength converter configured to convert at least part of the light source radiation into wavelength converter light, wherein the light transmissive window is transmissive for the wavelength converter light, wherein the wavelength converter comprises luminescent quantum dots which upon excitation with at least part of the light source radiation generate at least part of the wavelength converter light, and wherein the closed chamber comprises a filling gas comprising one or more of helium gas, hydrogen gas, nitrogen gas or oxygen gas, the filling gas having a relative humidity at 19° C. of at least 5%.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: An electrostatically controllable optical device is provided, comprising: a transmissive substrate (101); a single transmissive electrode (102) arranged on a surface of said substrate; a transmissive dielectric layer (103) arranged on said electrode; and a flexible roll-up blind (104) attached to said dielectric layer, said flexible roll-up blind comprising a flexible electrode (106) and a flexible optically functional layer (105) provided on said flexible electrode, said flexible roll-up blind having naturally a rolled configuration and being capable of unrolling in a roll-out direction in response to an electrostatic force.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: A light source (104) arranged on a substrate (100) and having a light exit surface, a wavelength converter (106) configured to convert light from a first wavelength to a second wavelength, the wavelength converter (106) having a light exit surface (110) and a light entrance surface (114) and an optical coupling element (112), arranged between and in contact with the light exit surface of the light source (104) and the light entrance surface (114) of the wavelength converter (106), and configured to couple light from the light source (104) to the wavelength converter (106), wherein at least a major portion of the surface of the wavelength converter (106), other than the light exit surface (110) and the light entrance surface (114), has a surface roughness, RA, less than 100 nm.

Abstract: The present invention relates to a light emitting device (100) comprising: a substrate (102); a light emitting diode structure (106) arranged on the substrate (102), the diode structure (106) comprising a first semiconducting layer (108), an active region (110) and a second semiconducting layer (112), wherein a light output surface of the diode structure comprises a plurality of protruding surface structures (104) each having a peak height, a sidewall slope (122) and orientation in relation to the substrate, the plurality of protruding structures (104) comprising a first set and a second set of protruding surface structures, the first set and second set of protruding surface structures differing by at least one of the peak height, sidewall slope and orientation in relation to the substrate. The invention also relates to a method for manufacturing a light emitting device where the protruding surface structures are formed by imprint lithography to form a three-dimensional pattern and subsequent etching.

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: An electrostatically controllable optical device is provided, comprising:—a transmissive substrate (101);—a transmissive electrode (102) arranged on a surface of said substrate;—a transmissive dielectric layer (103) arranged on said electrode; and—a flexible roll-up blind (104) attached to said dielectric layer, said flexible roll-up blind comprising a flexible electrode (106) and a flexible optically functional layer (105) provided on said flexible electrode, said flexible roll-up blind having naturally a rolled configuration and being capable of unrolling in a roll-out direction in response to an electrostatic force.

Abstract: Alight control panel is provided, comprising: a transmissive substrate; a transmissive electrically conductive layer arranged on a surface of said substrate; a transmissive dielectric layer arranged on said electrically conductive layer; a flexible roll-up blind attached to said dielectric layer, said flexible roll-up blind layer comprising a flexible electrically conductive layer and a flexible optically functional layer, said flexible layer having naturally a rolled configuration and being capable of unrolling in response to electrostatic force; and an optoelectronic device. The panel may be useful in various energy saving applications including smart windows for buildings or vehicles, e.g. providing an energy efficient light source or utilizing solar radiation for energy conversion.

Abstract: A method of manufacturing a semiconductor device including semiconductor elements having semiconductor zones (17, 18, 24, 44, 45) formed in a top layer (4) of a silicon wafer (1) situated on a buried insulating layer (2). In this method, a first series of process steps are carried out, commonly referred to as front-end processing, wherein, inter alia, the silicon wafer is heated to temperatures above 700° C. Subsequently, trenches (25) are formed in the top layer, which extend as far as the buried insulating layer and do not intersect pn-junctions. After said trenches have been filled with insulating material (26, 29), the semiconductor device is completed in a second series of process steps, commonly referred to as back-end processing, wherein the temperature of the wafer does not exceed 400° C. The trenches are filled in a deposition process wherein the wafer is heated to a temperature which does not exceed 500° C.

Abstract: A method of manufacturing a semiconductor device comprising semiconductor elements having semiconductor zones (17, 18, 24, 44, 45) formed in a top layer (4) of a silicon wafer (1) situated on a buried insulating layer (2). In this method, a first series of process steps are carried out, commonly referred to as front-end processing, wherein, inter alia, the silicon wafer is heated to temperatures above 700° C. Subsequently, trenches (25) are formed in the top layer, which extend as far as the buried insulating layer and do not intersect pn-junctions. After said trenches have been filled with insulating material (26, 29), the semiconductor device is completed in a second series of process steps, commonly referred to as back-end processing, wherein the temperature of the wafer does not exceed 400° C. The trenches are filled in a deposition process wherein the wafer is heated to a temperature which does not exceed 500° C.