Patents by Inventor Cornelis Mulder

Cornelis Mulder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230192435
    Abstract: The invention relates to an apparatus and a method for converting a sheet into a continuous strip, wherein the apparatus comprises a cutting device with one or more cutting members, one or more drives and a feeding device, wherein the apparatus is provided with one or more sensors for detecting the first longitudinal edge and the second longitudinal edge of the sheet and a control unit that is connected to the one or more drives, the feeding device and the one or more sensors for controlling the movement of the one more cutting members relative to the sheet based on the detection to create a sequence of cuts to form interconnected sheet sections, wherein the control unit is arranged for variably controlling the strip width.
    Type: Application
    Filed: February 15, 2023
    Publication date: June 22, 2023
    Inventors: Gerben MULDER, Cornelis VELDHOEN
  • Patent number: 4716314
    Abstract: A high speed I.sup.2 L circuit having a topology which is based on a layout of parallel arranged gate circuits in which the inverter transistors of each gate circuit are arranged in a row and below the signal lines to which they are connected, said signal lies extending transversely to the rows, while the complementary transistors for the current supply of the inputs of the gate circuits are situated laterally beside the signal lines. Said layout facilitates the designing of comparatively compact I.sup.2 L circuits in which various measures to increase their speed can be taken, for example, the use of dielectric isolation, reduction of the input series resistance, reversal of the doping profile and the application of a potential difference between the bases of the complementary transistors and the common emitter of the inverter transistors.
    Type: Grant
    Filed: August 6, 1975
    Date of Patent: December 29, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Cornelis Mulder, Henricus E. J. Wulms
  • Patent number: 4371795
    Abstract: An integrated circuit in dynamic MOS logic is composed of combinatory and sequential logic elements. Each of the latter comprises a succession of an input gate, an intermediate gate and an output gate which are activated to conduct by a corresponding phase of the first one and subsequent phases of a clock pulse cycle. The combinatory logic elements are all composed of gates of a single type, while the input signals are applied via the sequential logic elements and the output signals are output again via the latter elements. Thus, in the combinatory network only a sole type of interference is still relevant.
    Type: Grant
    Filed: September 7, 1979
    Date of Patent: February 1, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Cornelis Mulder, Leendert Nederlof, Cornelis Niessen, Rene M. G. Wijnhoven, Roelof H. W. Salters
  • Patent number: 4009397
    Abstract: A logic circuit in I.sup.2 L wherein across the base-emitter paths of the NPN-transistors diodes are connected in order to reduce the propagation delay time of the logic circuit.
    Type: Grant
    Filed: August 6, 1975
    Date of Patent: February 22, 1977
    Assignee: U.S. Philips Corporation
    Inventors: Cornelis Mulder, Henricus Elisabeth Jozef Wulms
  • Patent number: 3930909
    Abstract: A method of making a semiconductor device is described in which opposite-type impurities are introduced into the same surface of a substrate in such manner that the region of impurities of the opposite-type to that of the substrate overlaps completely the other substrate surface region. Then an epitaxial layer is grown on the surface of the substrate. There is thus formed two buried layers of which the one with the same type conductivity of the substrate is completely separated and isolated from the latter by the buried layer of opposite-type conductivity. Methods are also described for the manufacture of complementary bipolar transistors, in which the pnp type is made by the above described method.
    Type: Grant
    Filed: November 26, 1974
    Date of Patent: January 6, 1976
    Assignee: U.S. Philips Corporation
    Inventors: Albert Schmitz, Cornelis Mulder, Arie Slob