Abstract: A method for particle abatement in a semiconductor apparatus is provided. In a preferred embodiment, the method comprises processing a substrate in a process chamber of the semiconductor processing apparatus. The processing comprises loading the substrate in the process chamber having one or more inner surfaces, providing a reaction gas mixture to the process chamber, thereby forming a substrate film and a chamber wall film, and loading the substrate out of the process chamber. The method further comprises repeating the processing step one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness, upon which exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, thus reducing a probability of particle formation in the process chamber.

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.