Patents by Inventor Cornelius A. van der Jeugd
Cornelius A. van der Jeugd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070059932Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.Type: ApplicationFiled: November 9, 2006Publication date: March 15, 2007Inventors: Ernst Granneman, Vladimir Kuznetsov, Xavier Pages, Cornelius van der Jeugd
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Patent number: 7186298Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: August 18, 2003Date of Patent: March 6, 2007Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs
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Patent number: 7153772Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.Type: GrantFiled: June 10, 2004Date of Patent: December 26, 2006Assignee: ASM International N.V.Inventors: Ernst H. A. Granneman, Vladimir Kuznetsov, Xavier Pages, Cornelius A. van der Jeugd
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Publication number: 20060110943Abstract: A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.Type: ApplicationFiled: August 24, 2005Publication date: May 25, 2006Inventors: Johan Swerts, Hilde De Witte, Jan Maes, Christophe Pomarede, Ruben Haverkort, Yuet Wan, Marinus De Blank, Cornelius Van Der Jeugd, Jacobus Beulens
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Publication number: 20060088985Abstract: Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.Type: ApplicationFiled: August 25, 2005Publication date: April 27, 2006Inventors: Ruben Haverkort, Yuet Wan, Marinus De Blank, Cornelius van der Jeugd, Jacobus Beulens, Michael Todd, Keith Weeks, Christian Werkhoven, Christophe Pomarede
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Publication number: 20050017310Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.Type: ApplicationFiled: June 10, 2004Publication date: January 27, 2005Inventors: Ernst Granneman, Vladimir Kuznetsov, Xavier Pages, Cornelius van der Jeugd
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Publication number: 20040198153Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: ApplicationFiled: August 18, 2003Publication date: October 7, 2004Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 6692576Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: September 13, 2002Date of Patent: February 17, 2004Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs
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Publication number: 20030075274Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: ApplicationFiled: September 13, 2002Publication date: April 24, 2003Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 6491757Abstract: An apparatus for processing a substrate comprises a susceptor for supporting the substrate, an upper heat source spaced above the susceptor, a lower heat source spaced below the susceptor, and a controller. The controller provides power to the heat sources at a selected ratio between the sources. The controller is configured to vary the ratio during a high temperature processing cycle of a substrate to thereby vary the ratio of the heat provided by the heat sources during the cycle.Type: GrantFiled: August 17, 2001Date of Patent: December 10, 2002Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Publication number: 20020179586Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate.Type: ApplicationFiled: August 1, 2002Publication date: December 5, 2002Inventors: John F. Wengert, Loren R. Jacobs, Michael W. Halpin, Derrick W. Foster, Cornelius A. van der Jeugd, Robert M. Vyne, Mark R. Hawkins
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Patent number: 6464792Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate.Type: GrantFiled: July 11, 2000Date of Patent: October 15, 2002Assignee: ASM America, Inc.Inventors: John F. Wengert, Loren R. Jacobs, Michael W. Halpin, Derrick W. Foster, Cornelius A. van der Jeugd, Robert M. Vyne, Mark R. Hawkins
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Patent number: 6454866Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: July 10, 2000Date of Patent: September 24, 2002Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 6343183Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: June 27, 2000Date of Patent: January 29, 2002Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Publication number: 20010054390Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: ApplicationFiled: August 17, 2001Publication date: December 27, 2001Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 6203622Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: January 11, 2000Date of Patent: March 20, 2001Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs
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Patent number: 6113702Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: September 4, 1997Date of Patent: September 5, 2000Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 6093252Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate.Type: GrantFiled: April 25, 1996Date of Patent: July 25, 2000Assignee: ASM America, Inc.Inventors: John F. Wengert, Loren R. Jacobs, Michael W. Halpin, Derrick W. Foster, Cornelius A. van der Jeugd, Robert M. Vyne, Mark R. Hawkins
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Patent number: 6086680Abstract: A wafer susceptor for semiconductor processing devices, having a thermal mass which is close to that of the wafer. The similarity between the thermal masses of the susceptor and wafer enables a higher throughput and reduces temperature uniformities across the wafer. The low-mass susceptor may be made of a solid, thin disk with or without a central wafer support recess. A wafer temperature sensing aperture may be provided in the center of the susceptor. Alternatively, a low-mass susceptor is formed with an open-celled silicon carbide foam, with or without a thin skin of solid silicon carbide on the top forming a wafer support surface, or completely encapsulating the open-celled foam. The wafer is preferably supported on a plurality of pins extending upward from the susceptor. In a third embodiment, an ultra low-mass susceptor is formed as a ring with a central throughbore and a surrounding wafer support shelf below an outer ledge.Type: GrantFiled: March 26, 1996Date of Patent: July 11, 2000Assignee: ASM America, Inc.Inventors: Derrick W. Foster, Cornelius A. van der Jeugd, John F. Wengert
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Patent number: 6053982Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: August 30, 1996Date of Patent: April 25, 2000Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs