Patents by Inventor Cornelius C. Russ

Cornelius C. Russ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a semiconductor device including a silicon controlled rectifier
    Patent number: 8956924
    Abstract: A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: February 17, 2015
    Assignee: Infineon Technologies AG
    Inventors: Krzysztof Domanski, Cornelius C. Russ, Kai Esmark
  • Semiconductor ESD Device and Method of Making Same
    Publication number: 20130277712
    Abstract: A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
    Type: Application
    Filed: June 24, 2013
    Publication date: October 24, 2013
    Inventors: Krzysztof Domanski, Cornelius C. Russ, Kai Esmark