Abstract: Unwanted or parasitic capacitances may occur in MEMS switches. To reduce or eliminate the impact of the unwanted or parasitic capacitance, an extra device, such as a second MEMS switch, may be coupled to a first MEMS switch to divert the unwanted or parasitic capacitance to ground.

Abstract: Unwanted or parasitic capacitances may occur in MEMS switches. To reduce or eliminate the impact of the unwanted or parasitic capacitance, an extra device, such as a second MEMS switch, may be coupled to a first MEMS switch to divert the unwanted or parasitic capacitance to ground.

Abstract: Embodiments disclosed herein generally relate to switches that utilize micro-electromechanical systems (MEMS). By replacing transistors in many devices with switches such as MEMS switches, the devices may be used for logic applications. MEMS switches may be used in devices such as FPGAs, NAND devices, nvSRAM devices, AMS chips and general memory logic devices. The benefit of utilizing MEMS devices in place of transistors is that the transistors utilize more space on the chip. Additionally, the MEMS devices can be formed in the BEOL without having any negative impacts on the FEOL or necessitating the use of additional layers within the chip.

Abstract: Embodiments disclosed herein generally relate to switches that utilize micro-electromechanical systems (MEMS). By replacing transistors in many devices with switches such as MEMS switches, the devices may be used for logic applications. MEMS switches may be used in devices such as FPGAs, NAND devices, nvSRAM devices, AMS chips and general memory logic devices. The benefit of utilizing MEMS devices in place of transistors is that the transistors utilize more space on the chip. Additionally, the MEMS devices can be formed in the BEOL without having any negative impacts on the FEOL or necessitating the use of additional layers within the chip.

Abstract: Embodiments discussed herein generally relate to utilizing non-volatile memory elements to continuously drive other circuitry. There are many advantages to utilizing non-volatile memory to continuously drive other circuitry. For example, back end of the line (BEOL) compatible process may be used to fabricate the non-volatile memory elements that does not affect any front end of the line (FEOL) devices. This allows for an earlier integration of non-volatile technology into the latest state-of-the-art semiconductor process nodes. This is specifically important for FPGA and CPLDs, which make use of the latest process nodes.

Abstract: A non-volatile memory bitcell which comprises a first bistable cantilever module and a second bistable cantilever modules. The bistable cantilever modules have a shared output terminal and each has an input terminal and two actuating terminals. The first and second cantilever modules are arranged such that their states are complementary. The memory bitcell further includes buffering means arranged to prevent the flow of current from the shared output terminal and further arranged to indicate the states of the first and second cantilever modules.