Patents by Inventor Corrado IACONO

Corrado IACONO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated electronic device and method for manufacturing thereof
    Patent number: 9257550
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: February 9, 2016
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
  • INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
    Publication number: 20150325654
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Application
    Filed: June 30, 2015
    Publication date: November 12, 2015
    Inventors: DONATO CORONA, NICOLO' FRAZZETTO, ANTONIO GIUSEPPE GRIMALDI, CORRADO IACONO, MONICA MICCICHE'
  • Integrated electronic device and method for manufacturing thereof
    Patent number: 9142666
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: September 22, 2015
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
  • INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
    Publication number: 20120049902
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Application
    Filed: August 30, 2011
    Publication date: March 1, 2012
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Donato CORONA, Nicolo' FRAZZETTO, Antonio Giuseppe GRIMALDI, Corrado IACONO, Monica MICCICHE'