Patents by Inventor Cory Czarnik
Cory Czarnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240057841Abstract: Pet hair removers are disclosed herein. In some embodiments, the pet hair remover includes a handle, a collection chamber, a roller, a roller frame, a door, and a blade. In some embodiments, the pet hair remover comprises a protrusion on an exterior, planar surface of the roller, and the roller's rotation is limited by the protrusion contacting the roller frame. In some embodiments, the door is at least partially transparent to provide a view of the collection chamber. In some embodiments, the pet hair remover further comprises a spring that biases the door open, a latch that holds the door closed, and a button on the handle.Type: ApplicationFiled: August 18, 2022Publication date: February 22, 2024Inventors: Ross A. BILLINGS, Tylan A. Tschopp, Cory Czarnik, Aldon Blackwood, Zoumin Huang, Qin Zou, Caroline Elaine Dodson, YongHong Wang, Zhilin Pan
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Patent number: 8497193Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: GrantFiled: June 21, 2011Date of Patent: July 30, 2013Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Patent number: 8409353Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: GrantFiled: October 20, 2011Date of Patent: April 2, 2013Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Publication number: 20120031332Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: ApplicationFiled: October 20, 2011Publication date: February 9, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Publication number: 20110250764Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: ApplicationFiled: June 21, 2011Publication date: October 13, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Patent number: 7972441Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: GrantFiled: April 5, 2005Date of Patent: July 5, 2011Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Patent number: 7888217Abstract: A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.Type: GrantFiled: October 20, 2005Date of Patent: February 15, 2011Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Cory Czarnik, Christopher Sean Olsen, Khaled Z. Ahmed, Philip Allan Kraus
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Patent number: 7727828Abstract: A method for fabricating a gate dielectric of a field effect transistor is provided. In one embodiment, the method includes removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer, and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma. In another embodiment, the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the oxide layer on the gate dielectric layer.Type: GrantFiled: May 5, 2006Date of Patent: June 1, 2010Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Cory Czarnik, Andreas G. Hegedus, Christopher Sean Olsen, Khaled Z. Ahmed, Philip Allan Kraus
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Patent number: 7645709Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.Type: GrantFiled: July 30, 2007Date of Patent: January 12, 2010Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, James P. Cruse, Cory Czarnik
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Patent number: 7605008Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.Type: GrantFiled: April 2, 2007Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, James P. Cruse, Cory Czarnik
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Publication number: 20090035952Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.Type: ApplicationFiled: July 30, 2007Publication date: February 5, 2009Applicant: APPLIED MATERIALS, INC.Inventors: THAI CHENG CHUA, JAMES P. CRUSE, CORY CZARNIK
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Publication number: 20080241419Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.Type: ApplicationFiled: April 2, 2007Publication date: October 2, 2008Inventors: THAI CHENG CHUA, James P. Cruse, Cory Czarnik
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Publication number: 20080119057Abstract: A method of forming a gate dielectric comprising silicon and oxygen is provided. The gate dielectric may also include nitrogen or another high k material. In one aspect, forming the gate dielectric includes annealing a substrate in an oxidizing atmosphere to form a silicon oxide layer, depositing a silicon nitride layer or a high k layer on the silicon oxide layer by a vapor deposition, oxidizing an upper surface of the silicon nitride layer or high k layer, and then annealing the substrate. The gate dielectric may be formed within an integrated processing system.Type: ApplicationFiled: November 20, 2006Publication date: May 22, 2008Inventors: THAI CHENG CHUA, Christopher Sean Olsen, Cory Czarnik, Giuseppina Conti
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Publication number: 20080014759Abstract: Methods for forming a gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a silicon substrate, depositing a silicon nitride layer on the silicon oxide layer by a thermal process, wherein the silicon oxide layer and the silicon nitride layer are utilized as a gate dielectric layer in a gate structure, and thermally annealing the substrate. In another embodiment, the method includes forming a silicon oxide layer on the silicon substrate with a thickness less than 15 ?, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide layer with a thickness less than 15 ? by a thermal process, wherein the silicon oxide layer and the silicon nitride layer are utilized as a gate dielectric layer in a gate structure, plasma treating the silicon nitride layer; and thermally annealing the substrate.Type: ApplicationFiled: July 12, 2006Publication date: January 17, 2008Inventors: Thai Cheng Chua, Philip Allan Kraus, Christopher Sean Olsen, Cory Czarnik, Chikuang Charles Wang
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Publication number: 20070093013Abstract: A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, at least portions of the method are performed using at least one processing reactor arranged on a cluster tool. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma.Type: ApplicationFiled: May 5, 2006Publication date: April 26, 2007Inventors: Thai Chua, Cory Czarnik, Andreas Hegedus, Christopher Olsen, Khaled Ahmed, Philip Kraus
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Publication number: 20070093012Abstract: A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.Type: ApplicationFiled: October 20, 2005Publication date: April 26, 2007Inventors: Thai Chua, Cory Czarnik, Christopher Olsen, Khaled Ahmed, Philip Kraus
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Publication number: 20070026693Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Toir and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: ApplicationFiled: September 8, 2006Publication date: February 1, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Yoshitaka YOKOTA, Sundar RAMAMURTHY, Vedapuram ACHUTHARAMAN, Cory CZARNIK, Mehran BEHDJAT, Christopher OLSEN
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Publication number: 20070010103Abstract: A method of forming a silicon oxynitride gate dielectric. The method includes providing a structure comprising a silicon film formed on a substrate. The structure is exposed to a first plasma comprising a nitrogen source to incorporate nitrogen into the silicon film. The structure is oxidized in an atmosphere comprising nitric oxide to form a silicon oxynitride gate dielectric on the structure. The structure is then exposed to a second plasma comprising a nitrogen source.Type: ApplicationFiled: July 11, 2005Publication date: January 11, 2007Inventors: Thai Chua, Christopher Olsen, Philip Kraus, Khaled Ahmed, Cory Czarnik
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Patent number: D851143Type: GrantFiled: April 23, 2018Date of Patent: June 11, 2019Assignee: Black & Decker Inc.Inventor: Cory Czarnik
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Patent number: D866028Type: GrantFiled: April 17, 2018Date of Patent: November 5, 2019Assignee: Black & Decker Inc.Inventor: Cory Czarnik