Patents by Inventor Cory Dean

Cory Dean has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical devices with graphene on boron nitride
    Patent number: 9704956
    Abstract: Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: July 11, 2017
    Assignee: The Trustees of Columbia University in the city of New York
    Inventors: Kenneth Shepard, Philip Kim, James C. Hone, Cory Dean
  • ELECTRICAL DEVICES WITH GRAPHENE ON BORON NITRIDE
    Publication number: 20160197148
    Abstract: Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.
    Type: Application
    Filed: January 6, 2016
    Publication date: July 7, 2016
    Inventors: Kenneth Shepard, Philip Kim, James C. Hone, Cory Dean
  • Electrical devices with graphene on boron nitride
    Patent number: 9257509
    Abstract: Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: February 9, 2016
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Kenneth Shepard, Philip Kim, James C. Hone, Cory Dean
  • ELECTRICAL DEVICES WITH GRAPHENE ON BORON NITRIDE
    Publication number: 20140299839
    Abstract: Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.
    Type: Application
    Filed: December 21, 2011
    Publication date: October 9, 2014
    Applicant: The Trustees of Columbia University in the City of New York
    Inventors: Kenneth Shepard, Philip Kim, James C. Hone, Cory Dean