Abstract: Examples are disclosed relate to the application of films of transparent conductors over fluorine-doped tin oxide (FTO) to form a multi-layer structure comprising a lower sheet resistance and smoother surface, while exhibiting a higher transparency, than a single thicker FTO with an equivalent thickness. Various compositions of transparent conductor may be deposited using such solutions. Examples include Sn:In2O3, Ti:In2O3, Cd2SnO4, and combinations of two or more such materials. One example provides optical device, comprising a substrate, an FTO film on the substrate, and a film of a transparent conductor on the FTO film.

Abstract: Certain disclosed embodiments concern an organic solution suitable for forming metal oxide films, particularly thins films, comprising a metal salt selected from a Sn salt, an Sb salt, a dopant, and combinations thereof. The salt often is a halide salt, such as SnCl2 or SbCl3. Certain disclosed compositions are preferably formed using substantially pure reagents and may include a dopant, such as a fluoride dopant. Described solutions may be used to form thin films, such as a thin film comprising SnO2, Sb:SnO2, F:SnO2, or (Sb,F):SnO2. Such thin films may have any desired thickness, such as a thickness of from 200 or 700 nm, and are extremely smooth, such as having an RMS surface roughness >3 nm, such as 3 nm to 10 nm, with certain embodiments having an RMS surface roughness <2 nm or <1 nm. Devices can be assembled comprising the thin films on a suitable substrate.

Abstract: Examples are disclosed that relate to acid-stabilized precursor solutions for metal oxide film deposition, and to films deposited using the disclosed acid-stabilized precursor solutions. One disclosed example provides an aqueous precursor solution for forming a metal oxide film by liquid-phase deposition, the precursor solution comprising metal ions, a photolyzable and/or pyrolyzable ligand, and an acid. Another example provides a method of forming a metal oxide film, the method comprising coating a substrate with an aqueous precursor solution comprising metal ions, a photolyzable and/or pyrolyzable ligand, and an acid to form a film, and curing the film. Examples also are disclosed that relate to methods of fabricating optical waveguides using solution-based deposition of metal oxide films, followed by patterning. Examples are also disclosed that relate to optical waveguides fabricated according to the disclosed methods.

Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.

Abstract: Reagents and aqueous solutions thereof are described that are useful for aqueous processing to form thin films comprising metal oxides. A film, or layered film, may be incorporated into working devices where the thin film provides useful optical properties, electrical properties, or both.

Abstract: Disclosed herein are embodiments of a porous aluminum oxide thin film having a surface RMS roughness value of less than 1 nm. The thin film may also comprise phosphorus. The disclosed thin films may have a refractive index of from 1 to 2, such as from 1 to 1.5. Also disclosed are embodiments of as method for making the disclosed thin films, comprising forming an aqueous solution of the alumina precursor, a surfactant and optionally a phosphorus-containing precursor, and depositing the solution on a substrate.

Abstract: Certain disclosed embodiments concern an organic solution suitable for forming metal oxide films, particularly thins films, comprising a metal salt selected from a Sn salt, an Sb salt, a dopant, and combinations thereof. The salt often is a halide salt, such as SnCl2 or SbCl3. Certain disclosed compositions are preferably formed using substantially pure reagents and may include a dopant, such as a fluoride dopant. Described solutions may be used to form thin films, such as a thin film comprising SnO2, Sb:SnO2, F:SnO2, or (Sb,F):SnO2. Such thin films may have any desired thickness, such as a thickness of from 200 or 700 nm, and are extremely smooth, such as having an RMS surface roughness >3 nm, such as 3 nm to 10 nm, with certain embodiments having an RMS surface roughness <2 nm or <1 nm. Devices can be assembled comprising the thin films on a suitable substrate.

Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.

Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.

Abstract: Disclosed herein are embodiments of a porous aluminum oxide thin film having a surface RMS roughness value of less than 1 nm. The thin film may also comprise phosphorus. The disclosed thin films may have a refractive index of from 1 to 2, such as from 1 to 1.5. Also disclosed are embodiments of as method for making the disclosed thin films, comprising forming an aqueous solution of the alumina precursor, a surfactant and optionally a phosphorus-containing precursor, and depositing the solution on a substrate.

Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.