Abstract: A method for producing a nickel-containing surface coating that is metallic and conductive is provided. The method includes contacting a surface of a substrate with a liquid composition that includes nickel oxide nanoparticles, and modifying the nickel oxide nanoparticles to produce a nickel-containing metallic and conductive surface coating on the surface of the substrate. Also provided are nickel-containing (e.g., NiO and Ni containing) surface coatings and methods for making a liquid composition that includes nickel oxide nanoparticles. The methods and compositions find use in a variety of different applications.

Abstract: Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.

Abstract: Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.

Abstract: Provided are laser induced breakdown spectroscopy (LIBS) devices. Embodiments of the devices are configured to obtain a spatial resolution of 10 ?m or less. Also provided are methods of using the subject LIBS devices to determine whether one or more elements of interest are present in a target sample. The devices and methods find use in a variety of applications, e.g., submicron and nanoscale chemical analysis applications.

Abstract: Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.

Abstract: A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.

Abstract: A method for producing active glass nanoparticles that exhibit upconversion is described. The method employs pulsed-laser ablation of an active glass substrate using, for example, a high repetition rate ultra-short pulse duration laser under normal atmospheric conditions or in a liquid environment.

Abstract: Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.

Abstract: Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

Abstract: A method for producing active glass nanoparticles that exhibit upconversion is described. The method employs pulsed-laser ablation of an active glass substrate using, for example, a high repetition rate ultra-short pulse duration laser under normal atmospheric conditions or in a liquid environment.

Abstract: A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.

Abstract: The invention relates to the deposition or transfer of material using a laser induced forward transfer process. More specifically, the invention relates to the transfer of material using a laser induced forward transfer process wherein the transfer process is facilitated or enabled by nanomaterials. Nanomaterials in the form of nanoparticles or nanofilms may be employed, optionally including a surface coating or self-assembled monolayer surface coating, making use of properties of the nanomaterials that allow the laser induced forward transfer process to be practiced at irradiation energies and temperatures lower than commonly used. The technique may be well suited for depositing organic layers.

Abstract: Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.