Abstract: A method of an authentication server may include receiving, from a recipient computer system, recipient metadata comprising recipient information from the recipient computing system and a recipient network address. Access to the encrypted payload is authenticated by the recipient computer system using the recipient metadata. A response is sent to the recipient computer system after authenticating the recipient computer system. The recipient computer system decrypts the encrypted payload to access the payload in response to receiving the response.

Abstract: A method of producing a fungal leachate solution comprises the steps of obtaining a feedstock of lignocellulosic substrate; colonizing the substrate with a selected fungus; and adding water to the colonized substrate to form a liquid medium containing at least one of sugar alcohol, a phenolic compound and a fatty acid. A leachate from the liquid medium can be used as a liquid culture medium to culture fungi.

Abstract: Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.

Abstract: Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.

Abstract: Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming a germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.

Abstract: An improved plasma etching process. There is disclosed apparatus and method (or process) for etching patterns in metal films deposited on a semiconductor wafer. This improved process is particularly useful in the fabrication of certain semiconductor devices, such as MOS and bipolar integrated circuits and Schottky transistors (semiconductor/metal interfaces) which employ contact "fingers". The fingers are constructed from layers of metal, such as aluminum, tungsten, and titanium with aluminum being the outermost layer.

Abstract: An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.