Abstract: A semiconductor wafer bonding tool is provided. The semiconductor wafer bonding tool can be used to perform a wafer-wafer bonding between a first semiconductor wafer and a second semiconductor wafer. The semiconductor wafer bonding tool includes a wafer bonding chuck configured to support a first semiconductor wafer at a first side. A plurality of discrete actuators are disposed at the first side of the wafer bonding chuck. Respective actuators of the plurality of discrete actuators are capable of displacing independently of one another. The respective actuators can be displaced based on one or more characteristics of the first semiconductor wafer or the second semiconductor wafer. In doing so, an improved wafer-wafer bonding process can be implemented.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments include obtaining qualitative data from within the pattern area of a reticle indicative of the physical characteristics of the pattern area. Additional embodiments include obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. In further embodiments qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. Several embodiments provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and to increase throughput because the photolithography tool is not used to measure the reticle.

Abstract: Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments include obtaining qualitative data from within the pattern area of a reticle indicative of the physical characteristics of the pattern area. Additional embodiments include obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. In further embodiments qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. Several embodiments provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and to increase throughput because the photolithography tool is not used to measure the reticle.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments of the invention are directed toward obtaining qualitative data from within the pattern area of a reticle that is indicative of the physical characteristics of the pattern area. Additional embodiments of the invention are directed toward obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. These two aspects of the invention can be combined in further embodiments in which qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. As a result, several embodiments of methods and systems in accordance with the invention provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements.

Abstract: Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).

Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.

Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticle and/or pellicle. The corrective filter may be positioned between a light source and the reticle, between the reticle and a wafer, or in combination with the reticle and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter in a photolithography system.

Abstract: A system is provided for producing an integrated circuit using a stepper and a scanner in successive stages. Calibration data developed for the transfer of a wafer from the stepper to the scanner while maintaining the same orientation is transformed, and the transformed data is used to align a rotated wafer on the scanner.

Abstract: A system is provided for processing a semiconductor wafer. The wafer is pre-aligned at a first workstation. The pre-alignment may be accomplished by an edge sensor. Alignment mark portions of the wafer are exposed at the same workstation. A fiber optic bundle may be used to expose the alignment mark portions. A high degree of accuracy is not needed to expose the alignment mark portions. The accuracy achieved by the pre-alignment mechanism and the fiber optic bundle is sufficient. The invention saves processing time at a subsequent stepper or scanner exposure workstation.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticle and/or pellicle. The corrective filter may be positioned between a light source and the reticle, between the reticle and a wafer, or in combination with the reticle and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.

Abstract: A system is provided for producing an integrated circuit using a stepper and a scanner in successive stages. Calibration data developed for the transfer of a wafer from the stepper to the scanner while maintaining the same orientation is transformed, and the transformed data is used to align a rotated wafer on the scanner.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticule and/or pellicle. The corrective filter may be positioned between a light source and the reticule, between the reticule and a wafer, or in combination with the reticule and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: A system is provided for producing an integrated circuit using a stepper and a scanner in successive stages. Calibration data developed for the transfer of a wafer from the stepper to the scanner while maintaining the same orientation is transformed, and the transformed data is used to align a rotated wafer on the scanner.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticle and/or pellicle. The corrective filter may be positioned between a light source and the reticle, between the reticle and a wafer, or in combination with the reticle and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: A system is provided for processing a semiconductor wafer. The wafer is pre-aligned at a first workstation. The pre-alignment may be accomplished by an edge sensor. Alignment mark portions of the wafer are exposed at the same workstation. A fiber optic bundle may be used to expose the alignment mark portions. A high degree of accuracy is not needed to expose the alignment mark portions. The accuracy achieved by the pre-alignment mechanism and the fiber optic bundle is sufficient. The invention saves processing time at a subsequent stepper or scanner exposure workstation.