Abstract: Disclosed herein are novel compounds for treating apicomplexan parasite related disorders, methods for their use; cell line and non-human animal models of the dormant parasite phenotype and methods for their use in identifying new drugs to treat apicomplexan parasite related disorders, and biomarkers to identify disease due to the parasite and its response to treatment.

Abstract: A method includes determining a voxel grid representation of occupied voxels of an environment of a robotic device based on sensor data from a depth sensor on the robotic device. The method further includes assigning a plurality of occupied voxels from the voxel grid representation to a surface within the environment. The method additionally includes determining an image to project onto the surface with a projector on the robotic device. The method further includes modifying the image to fit the surface within the environment based on the plurality of occupied voxels assigned to the surface. The method also includes causing the projector coupled to the robotic device to project the modified image onto the surface in the environment.

Abstract: Presently disclosed embodiments provide a safe and easy way for a child, or other wearer, to independently tighten or loosen the chinstrap on his or her helmet while it remains buckled on his or her head. Disclosed embodiments comprise a knob attached to a side of the chinstrap webbing. The knob is an adjustment mechanism used to loosen or tighten the helmet chinstrap. After the wearer, possibly a child, buckles the helmet chinstrap below his or her chin, the wearer can reach up and twist the knob to loosen or tighten the chinstrap to achieve the proper fit. In some embodiments, each knob may have a cord or the like affixed at one end to an interior assembly and affixed at another end to the chinstrap material. In operation, the chinstrap may be buckled under the chin, and then the knob may be rotated forward, the attached cord is shortened and, thus, the chinstrap may be tightened.

Abstract: An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle ? with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle ? with the x-axis of the wafer.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments include obtaining qualitative data from within the pattern area of a reticle indicative of the physical characteristics of the pattern area. Additional embodiments include obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. In further embodiments qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. Several embodiments provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and to increase throughput because the photolithography tool is not used to measure the reticle.

Abstract: An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle ? with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle ? with the x-axis of the wafer.

Abstract: Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments include obtaining qualitative data from within the pattern area of a reticle indicative of the physical characteristics of the pattern area. Additional embodiments include obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. In further embodiments qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. Several embodiments provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and to increase throughput because the photolithography tool is not used to measure the reticle.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments of the invention are directed toward obtaining qualitative data from within the pattern area of a reticle that is indicative of the physical characteristics of the pattern area. Additional embodiments of the invention are directed toward obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. These two aspects of the invention can be combined in further embodiments in which qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. As a result, several embodiments of methods and systems in accordance with the invention provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements.

Abstract: Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).

Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments of the invention are directed toward obtaining qualitative data from within the pattern area of a reticle that is indicative of the physical characteristics of the pattern area. Additional embodiments of the invention are directed toward obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. These two aspects of the invention can be combined in further embodiments in which qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. As a result, several embodiments of methods and systems in accordance with the invention provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.