Abstract: A support 200 for supporting a substrate 50 in a plasma process chamber 20, comprises a dielectric member 205 having an electrode embedded therein, and having a receiving surface for receiving the substrate. An electrical conductor 210 supporting the dielectric member 205, comprises a peripheral portion 228 extending beyond the electrode in the dielectric member. A voltage supply 158 supplies an RF bias voltage to the electrode embedded in the dielectric member 205 to capacitively couple RF power from the electrode to the conductor 210, and optionally, supplies a DC voltage to electrostatically hold the substrate 50 to the dielectric member. A collar ring 230 on the peripheral portion 228 of the conductor 210, comprises a RF electrical field absorption that is sufficiently low to capacitively couple RF power from the peripheral portion of the conductor through the collar ring to a plasma sheath that extends; above the collar ring, during use of the chuck in the plasma process chamber 20.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material.

Abstract: A method and apparatus for generating a complex waveform and coupling the waveform to a reaction chamber of a semiconductor wafer processing system using a power amplifier. Specifically, the apparatus includes a complex waveform generator coupled to a high-power amplifier. The high-power amplifier is coupled to one or more frequency selective matching networks which select bands of RF signal to be coupled to plasma excitation circuit within the semiconductor wafer processing system.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages.

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

Abstract: A plasma processing system including a plasma processing chamber; an antenna circuit including a source antenna positioned relative to the processing chamber so as to couple energy into a plasma within the chamber during processing, the antenna circuit having a first terminal and a second terminal with the source antenna electrically coupled between the first and second terminals; and a local impedance transforming network connected to the antenna circuit, the local impedance transforming network including a first capacitor connected between the first terminal and a grounded node, and a second capacitor connected between the second terminal and the grounded node.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages.

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

Abstract: An electrostatic chuck for holding an article to be processed in a plasma reaction chamber and comprising a metal pedestal coated with a layer of dielectric material in which is formed a cooling gas distribution system for passing and distributing a cooling gas between the upper surface of the layer and the article when supported on the pedestal. The gas distribution system comprises a plurality of intersecting grooves formed entirely in the upper surface of the layer with small gas distribution holes through intersections of the grooves over upper ends of cooling gas receiving holes formed in an underside of the pedestal.

Abstract: A variable RF power splitter including three serially connected inductors (14, 15, 16) powered by an RF power source (11, 12). Two loads (17, 18), between which the RF power is to be split, are connected to ground from two different points in the inductance string. A variable reactance (19) connected to ground from another point in the inductance string controls the RF power splitting.

Abstract: An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm.

Abstract: A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

Abstract: A method, and corresponding apparatus, for matching a generator impedance with an unknown and possibly changing load impedance, to maximize power transferred to the load. The apparatus includes an impedance matching network, and a network model, to estimate the load impedance from known present network values and a measurement of network input impedance, and to estimate optimum network values from the input impedance and the estimated load impedance. A controller computes new network values based on the present and optimum values, and outputs the new values to the network. The process is repeated using the new network values to estimate the load impedance and generate a new set of optimum values. The controller uses a control equation with parameters selected to ensure rapid convergence on the maximum-power condition, without overshoot or instability.

Abstract: A matching network matches an output impedance of a source with an input impedance of a load. The matching network includes a plurality of transmission line stubs. Each transmission line stub includes a first transmission line conductor, a second transmission line conductor running parallel to but not in electrical contact with the first transmission line conductor, and ferrite dielectric material between the first transmission line conductor and the second transmission line conductor. A magnetic field is used to vary the relative permeability of the ferrite dielectric material.