Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bond layer disposed over the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed over the bond layer and a raised top surface for supporting a substrate. The raised top surface includes an outer diameter. The heater is disposed between the bottom surface of the ceramic plate and the bond layer. The heater element includes an inner heating element and an outer heating element. The inner heating element is arranged in a central circular area adjacent to the bottom surface of the ceramic plate and the outer heating element is arranged in an annular area that surrounds the central circular area and is adjacent to the bottom surface of the ceramic plate. An outer diameter of the outer heating element is inset from an annual heater setback region of the ceramic plate.

Abstract: A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner diameter and the outer diameter. At least two tabs extend radially outward from the annular body. The cross-sectional width of the annular body between the inner diameter and the outer diameter is less than 1.0 inch.

Abstract: A flow optimizer is disclosed for use in plasma chamber. The flow optimizer includes a ring that is disposed between a wafer support and a dielectric window defined in the plasma chamber. The ring of the flow optimizer is configured to be positioned between the wafer support and the dielectric window so that an outer edge of the ring is adjacent to side walls of the plasma chamber and an opening of the ring is substantially aligned with a diameter of the wafer support.

Abstract: A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

Abstract: A gas distribution plate for a substrate processing system includes an outer ring including a stepped interface on a radially inner surface thereof and N inner rings, where N is an integer greater than zero. At least one of the N inner rings is circumferentially segmented and includes an inner stepped interface and an outer stepped interface. An outer stepped interface of a radially outer one of the N inner rings is configured to rest on and mate with the inner stepped interface of the outer ring. A center portion includes an outer stepped interface on a radially outer surface thereof that is configured to rest on and mate with an inner stepped interface of a radially inner one of the N inner rings.

Abstract: A system for heating a dielectric window of a plasma processing chamber is provided. In one example, the method includes the use of a heating element. The heating element includes a dielectric disc and a conductive line formed in the dielectric disc. The conductive line includes a plurality of loops oriented radially around the dielectric disc. Each loop extends from a radial periphery of the dielectric disc toward a center of the dielectric disc. Each loop of the conductive line has an inward segment coupled to a return segment by a switchback segment. The inward segment is vertically aligned with the return segment.

Abstract: A coil portion is formed. A first articulation portion extends from the coil portion. A first mounting structure extends from the first articulation portion. The first mounting structure includes a first mounting region configured to mount in contact with a terminal of a first electrical component. The first articulation portion and the first mounting structure are configured to position the first mounting region at a location outside of a strong electromagnetic field emanating from the coil portion. A second articulation portion extends from the coil portion. A second mounting structure extends from the second articulation portion. The second mounting structure includes a second mounting region configured to mount in contact with a terminal of a second electrical component. The second articulation portion and the second mounting structure are configured to position the second mounting region at a location outside of the strong electromagnetic field emanating from the coil portion.

Abstract: A substrate support for a substrate processing chamber configured to implement a rapid alternating process includes a baseplate and a heating plate arranged on the baseplate. The heating plate includes a first zone including a first heating element configured to adjust a first temperature of the first zone of the heating plate and a second zone including a second heating element configured to adjust a second temperature of the second zone of the heating plate. A first thermally conductive bond layer is arranged between the heating plate and the baseplate. The first thermally conductive bond layer is configured to transfer heat from the heating plate to the baseplate during the rapid alternating process. The rapid alternating process includes a plurality of alternating deposition steps and etching steps.

Abstract: A coil portion is formed. A first articulation portion extends from the coil portion. A first mounting structure extends from the first articulation portion. The first mounting structure includes a first mounting region configured to mount in contact with a terminal of a first electrical component. The first articulation portion and the first mounting structure are configured to position the first mounting region at a location outside of a strong electromagnetic field emanating from the coil portion. A second articulation portion extends from the coil portion. A second mounting structure extends from the second articulation portion. The second mounting structure includes a second mounting region configured to mount in contact with a terminal of a second electrical component. The second articulation portion and the second mounting structure are configured to position the second mounting region at a location outside of the strong electromagnetic field emanating from the coil portion.

Abstract: Methods for using an electron beam treatment performed on an amorphous carbon layer to form a treated amorphous carbon layer with high etching resistance are provided. In one embodiment, a method of treating an amorphous carbon film includes providing a substrate having a material layer disposed, forming an amorphous carbon layer on the material layer, and performing an electron beam treatment process on the amorphous carbon layer.