Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

Abstract: An apparatus and method for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from a first compartment to a second compartment by rotating the workpiece on a workpiece mover through an internal pathway. The transfer mechanism comprises two doors coupled to the workpiece mover to seal the internal pathway between the first and second compartments so that the two compartments are isolated and the workpiece can be processed sequentially and in isolation. The apparatus further comprises components to enable the processing of a workpiece. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer by rotating the workpiece on the workpiece mover to the second compartment for further processing.

Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors that seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then to transfer the workpiece to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece.

Abstract: A visual indicator cold trapping system is provided to allows the visual inspection of the adequacy of a cold trap. The cold trapping system includes a hollow transparent connector operatively connected to the input of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the upstream flow of the cold trap. Alternatively, the cold trapping system includes a hollow transparent connector operatively connected to the output of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the downstream flow of the cold trap.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors to seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: An integrated precursor delivery system which integrates a precursor delivery system with a processing chamber is provided for improving the precursor delivery lines to the processing chamber, and for keeping the delivery lines intact during servicing the processing chamber. The apparatus provides an integrated precursor delivery system mounted on the processing chamber lid with the chamber lid being removable for allowing manual access to the inside of the processing chamber. With the precursor delivery system is in the close vicinity of the processing chamber, the delivery lines are shortest possible, minimizing the chance of precursor contamination. With the delivery system and the chamber lid in one unit, the removal of the chamber lid will no longer require breaking the delivery lines, leading to better contamination control. The present invention is particular suitable for liquid precursors since liquid is much more difficult to evacuate than gas.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: An integrated precursor delivery system which integrates a precursor delivery system with a processing chamber is provided for improving the precursor delivery lines to the processing chamber, and for keeping the delivery lines intact during servicing the processing chamber. The apparatus provides an integrated precursor delivery system mounted on the processing chamber lid with the chamber lid being removable for allowing manual access to the inside of the processing chamber. With the precursor delivery system is in the close vicinity of the processing chamber, the delivery lines are shortest possible, minimizing the chance of precursor contamination. With the delivery system and the chamber lid in one unit, the removal of the chamber lid will no longer require breaking the delivery lines, leading to better contamination control. The present invention is particular suitable for liquid precursors since liquid is much more difficult to evacuate than gas.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: An apparatus controls deposition rate of multi-layer films deposited by chemical vapor deposition (CVD). The apparatus includes a CVD chamber; a vapor precursor injector coupled to the CVD chamber; and a liquid precursor injector coupled to the CVD chamber.