Abstract: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7.

Abstract: A coated quantum dot and methods of making coated quantum dots are provided. Products including quantum dots described herein are also disclosed.

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract: A coated quantum dot and methods of making coated quantum dots are provided.

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.

Abstract: A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a composition including one or more functional groups that are capable of being cross-linked is disclosed. An ink composition comprising a nanomaterial, a liquid vehicle, and scatterers is also disclosed. An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a perfluorocompound is further disclosed. A method for inkjet printing an ink including nanomaterial and a liquid vehicle with a surface tension that is not greater than about 25 dyne/cm is disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. Devices prepared from inks and methods of the invention are also described.

Abstract: Detecting an issue in a digital printer that has an optical element positioned to direct a laser beam towards a photoconductor surface may include sending optical element position commands to move the optical element to compensate for inconsistent movements of a photoconductor drum and creating a record of the optical element position commands.

Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%.

Abstract: The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula: X-Sp-Z, wherein: X represents a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, an other nitrogen containing group, a carboxylic acid group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) a reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic.

Abstract: A nanoparticle has a semiconductor nanocrystal capable of emitting light. The nanoparticle further includes a ligand attached to a surface of the coating. The ligand is represented by the formula: X-Sp-Z, wherein X represents, e.g., a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic.

Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals.

Abstract: A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed.

Abstract: A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

Abstract: A composition comprising a semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. Also disclosed is a composition comprising a semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

Abstract: A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed.

Abstract: A quantum dot including a fluorine-containing ligand attached to a surface thereof and having a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot. A method for preparing a quantum dot with a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot is also disclosed. The method comprises contacting a quantum dot having a fluorine-containing ligand attached to a surface thereof with a fluoropolymer to coat the fluoropolymer over at least a portion of the outer surface of the quantum dot. A device including the quantum dot taught herein is further disclosed. An emissive material including the quantum dot taught herein is further disclosed.