Patents by Inventor Craig Core
Craig Core has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240091401Abstract: The present disclosure pertains to crosslinkable compositions and systems as well as methods for forming crosslinked compositions in situ, including the use of the same for embolizing vasculature including the neurovasculature within a patient, among many other uses.Type: ApplicationFiled: November 6, 2023Publication date: March 21, 2024Inventors: Jeffrey Groom, Craig Wiltsey, Quynh Pham, Nikhita Mansukhani, Courtney Guertin, Lee Core, Upma Sharma
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Publication number: 20240091402Abstract: The present disclosure pertains to crosslinkable compositions and systems as well as methods for forming crosslinked compositions in situ, including the use of the same for embolizing vasculature including the neurovasculature within a patient, among many other uses.Type: ApplicationFiled: November 6, 2023Publication date: March 21, 2024Inventors: Jeffrey Groom, Craig Wiltsey, Quynh Pham, Nikhita Mansukhani, Courtney Guertin, Lee Core, Upma Sharma
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Publication number: 20230422624Abstract: A low noise piezoelectric sensor, such as a piezoelectric acoustic transducer, includes a first conductive layer, a second conductive layer, and a piezoelectric layer between the first conductive layer and the second conductive layer. The piezoelectric layer comprises aluminum scandium nitride (AlScN) having a scandium content of greater than 15%, in which the scandium content and an aluminum content comprises 100% of the aluminum scandium nitride. In this way, the piezoelectric layer (or the sensor including the piezoelectric layer) achieves a dissipation factor of less than about 0.1%.Type: ApplicationFiled: December 3, 2021Publication date: December 28, 2023Inventors: Robert John LITTRELL, Craig CORE
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Patent number: 11696078Abstract: A robust MEMS transducer includes a kinetic energy diverter disposed within its frontside cavity. The kinetic energy diverter blunts or diverts kinetic energy in a mass of air moving through the frontside cavity, before that kinetic energy reaches a diaphragm of the MEMS transducer. The kinetic energy diverter renders the MEMS transducer more robust and resistant to damage from such a moving mass of air.Type: GrantFiled: August 2, 2022Date of Patent: July 4, 2023Assignee: QUALCOMM IncorporatedInventors: Craig Core, Hamid Basaeri, Robert Littrell
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Publication number: 20220369043Abstract: A robust MEMS transducer includes a kinetic energy diverter disposed within its frontside cavity. The kinetic energy diverter blunts or diverts kinetic energy in a mass of air moving through the frontside cavity, before that kinetic energy reaches a diaphragm of the MEMS transducer. The kinetic energy diverter renders the MEMS transducer more robust and resistant to damage from such a moving mass of air.Type: ApplicationFiled: August 2, 2022Publication date: November 17, 2022Inventors: Craig Core, Hamid Basaeri, Robert Littrell
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Patent number: 11438706Abstract: A robust MEMS transducer includes a kinetic energy diverter disposed within its frontside cavity. The kinetic energy diverter blunts or diverts kinetic energy in a mass of air moving through the frontside cavity, before that kinetic energy reaches a diaphragm of the MEMS transducer. The kinetic energy diverter renders the MEMS transducer more robust and resistant to damage from such a moving mass of air.Type: GrantFiled: January 7, 2021Date of Patent: September 6, 2022Assignee: Vesper Technologies Inc.Inventors: Craig Core, Hamid Basaeri, Robert Littrell
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Patent number: 11099078Abstract: An acoustic sensor has a MEMS die with MEMS structure. Among other things, the MEMS structure includes a diaphragm configured to mechanically respond to incident acoustic signals, and a temperature sensor member configured to detect temperature.Type: GrantFiled: August 23, 2018Date of Patent: August 24, 2021Assignee: Vesper Technologies, Inc.Inventors: Robert Littrell, Yu Hui, Craig Core, Ronald Gagnon
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Publication number: 20210211809Abstract: A robust MEMS transducer includes a kinetic energy diverter disposed within its frontside cavity. The kinetic energy diverter blunts or diverts kinetic energy in a mass of air moving through the frontside cavity, before that kinetic energy reaches a diaphragm of the MEMS transducer. The kinetic energy diverter renders the MEMS transducer more robust and resistant to damage from such a moving mass of air.Type: ApplicationFiled: January 7, 2021Publication date: July 8, 2021Inventors: Craig Core, Hamid Basaeri, Robert Littrell
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Patent number: 10825982Abstract: A piezoelectric Micro-Electro-Mechanical Systems (MEMS) device comprising: a physical element; and a piezoelectric sensor element, with the physical element positioned in proximity to a moving portion of the piezoelectric sensor element, and with proximity of the physical element to the moving portion reducing a probability of breakage of the piezoelectric sensor element by limiting an excursion of the piezoelectric sensor element, relative to a probability of breakage of the piezoelectric sensor element in another piezoelectric MEMS device without the physical element.Type: GrantFiled: September 11, 2015Date of Patent: November 3, 2020Assignee: Vesper Technologies Inc.Inventors: Robert J. Littrell, Karl Grosh, Craig Core, Yu Hui, Wang Kyung Sung
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Patent number: 8129803Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.Type: GrantFiled: July 16, 2010Date of Patent: March 6, 2012Assignee: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Brosnihan, Craig Core, Thomas Kieran Nunan, Jason Weigold, Xin Zhang
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Publication number: 20100285628Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.Type: ApplicationFiled: July 16, 2010Publication date: November 11, 2010Applicant: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Brosnihan, Craig Core, Thomas Kieran Nunan, Jason Weigold, Xin Zhang
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Patent number: 7825484Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.Type: GrantFiled: April 25, 2005Date of Patent: November 2, 2010Assignee: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Brosnihan, Craig Core, Thomas Kieran Nunan, Jason Weigold, Xin Zhang
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Publication number: 20060237806Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.Type: ApplicationFiled: April 25, 2005Publication date: October 26, 2006Inventors: John Martin, Timothy Brosnihan, Craig Core, Thomas Kieran Nunan, Jason Weigold, Xin Zhang