Abstract: A fast and fully automated approach for determining the number of atomic planes in layered material samples is provided. Examples of such materials may include graphene and bismuth telluride (Bi2Te3), and materials from the bismuth selenide (Bi2Se3) samples is provided. The disclosed procedure allows for in situ identification of the borders of the regions with the same number of atomic planes. The procedure is based on an image processing algorithm that employs micro-Raman calibration, light background subtraction, correction for lighting non-uniformity, and color and grayscale image processing on each pixel of a graphene image. The developed procedure may further provide a pseudo-color map that marks the single-layer and few-layer regions of the sample. Beneficially, embodiments of the developed procedure may be employed using various substrates and can be applied to materials that are mechanically exfoliated, chemically derived, or deposited on an industrial scale.