Abstract: An ACT film has a plurality of rectenna, each having having an antenna and a diode. The ACT film is manufactured using nanoimprint lithography and roll-to-roll processes. An imprint template is overlaid on a feedstock that has two metal layers separated by one or more oxide layers. The feedstock is etched to expose the lower metal layer. The lower metal layer is undercut to create a discontinuity in the lower metal layer to avoid a short to the diode in the rectenna. A metamaterial film is also made. To complete manufacture of the ACT film, the rectenna film and the metamaterial film are aligned to ensure the rectennas in the rectenna film are located over the holes in the metamaterials in the metamaterial film. Once aligned, the rectenna film and the metamaterial films are bonded together.

Abstract: Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.

Abstract: A method of forming a thin film device on a flexible substrate is disclosed. The method includes depositing an imprintable material over the flexible substrate. The imprintable are stamped material forming a three-dimensional pattern in the imprintable material. A sacrificial layer is formed over the three-dimensional pattern. A conductive layer is deposited over the sacrificial layer. The sacrificial layer is removed, leaving portions of the conductive layer as defined by the three-dimensional pattern.

Abstract: Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

Abstract: An silver island anti-fuse including a first electrical conductor, an electrically resistive material in contact with the first conductor and at least one silver island disposed opposite the first electrical conductor and upon the electrically resistive material. A second electrical conductor disposed over the silver island intimately couples the silver island to the electrically resistive material. When a critical potential is applied across the anti-fuse, a metallic filament precipitates from the silver island through the electrically resistive material layer, establishing a short and thus switching the silver island anti-fuse from a high resistance to a low resistance. A method of making the silver island anti-fuse and a memory device incorporating the silver island anti-fuse are further provided.

Abstract: The present invention provides for a common substrate with multiple sections, each constituting a separate layer of a memory device. Fold lines are arranged on the substrate to define separate sections and to provide a means for folding the sections on each other to form a multiple-layer memory device. In one application, a substrate has a fold line formed by alterations to the substrate material to form a fold line on the substrate. A first conductor section is formed with an array of parallel conductors or wires spaced across the section. A second section on the common substrate has an array of parallel conductors or wires spaced across the second section, the conductors being perpendicular to the conductors on the first section. The first and second sections are folded along the fold line over on top of each other, after a semiconductor layer has been deposited on one or both of the conductor layers, thereby forming a matrix of memory cells.

Abstract: Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.

Abstract: Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

Abstract: Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

Abstract: Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.

Abstract: Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.

Abstract: Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

Abstract: Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

Abstract: Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.

Abstract: The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch.

Abstract: A data storage device is disclosed that comprises a cross-point memory array formed on a dielectric substrate material. The cross-point memory array comprises first and second sets of transverse electrodes separated by a storage layer including at least one semiconductor layer. The storage layer forms a non-volatile memory element at each crossing point of electrodes from the first and second sets. Each memory element can be switched between low and high impedance states, representing respective binary data states, by application of a write signal in the form of a predetermined current density through the memory element. Each memory element includes a diode junction formed in the storage layer, at least whilst in the low impedance state. A plurality of the data storage devices can be stacked and laminated into a memory module providing inexpensive high capacity data storage.

Abstract: The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch.

Abstract: A data storage device is disclosed that comprises a cross-point memory array formed on a dielectric substrate material. The cross-point memory array comprises first and second sets of transverse electrodes separated by a storage layer including at least one semiconductor layer. The storage layer forms a non-volatile memory element at each crossing point of electrodes from the first and second sets. Each memory element can be switched between low and high impedance states, representing respective binary data states, by application of a write signal in the form of a predetermined current density through the memory element. Each memory element includes a diode junction formed in the storage layer, at least whilst in the low impedance state. A plurality of the data storage devices can be stacked and laminated into a memory module providing inexpensive high capacity data storage.