Abstract: A semiconductor device include a first semiconductor layer with a first doping concentration. A second semiconductor layer has a second doping concentration and has a first surface and a second opposing surface. The second doping concentration is higher than the first doping concentration. The first surface of the second semiconductor layer is in contact with the first semiconductor layer. A contact is on the second surface of the second semiconductor layer. The contact includes a metal and a semiconductor.

Abstract: One or more trenches can be formed around a first portion of a semiconductor substrate, and an insulating layer can be formed under the first portion of the semiconductor substrate. The one or more trenches and the insulating layer electrically isolate the first portion of the substrate from a second portion of the substrate. The insulating layer can be formed by forming a buried layer in the substrate, such as a silicon germanium layer in a silicon substrate. One or more first trenches through the substrate to the buried layer can be formed, and open spaces can be formed in the buried layer (such as by using an etch selective to silicon germanium over silicon). The one or more first trenches and the open spaces can optionally be filled with insulative material(s). One or more second trenches can be formed and filled to isolate the first portion of the substrate.

Abstract: One or more trenches can be formed around a first portion of a semiconductor substrate, and an insulating layer can be formed under the first portion of the semiconductor substrate. The one or more trenches and the insulating layer electrically isolate the first portion of the substrate from a second portion of the substrate. The insulating layer can be formed by forming a buried layer in the substrate, such as a silicon germanium layer in a silicon substrate. One or more first trenches through the substrate to the buried layer can be formed, and open spaces can be formed in the buried layer (such as by using an etch selective to silicon germanium over silicon). The one or more first trenches and the open spaces can optionally be filled with insulative material(s). One or more second trenches can be formed and filled to isolate the first portion of the substrate.

Abstract: A system and method is disclosed for manufacturing a bipolar junction transistor that comprises an emitter/base layer that is formed by a single deposition process. In one advantageous embodiment of the invention the emitter/base layer comprises an emitter layer that comprises an epitaxially grown mono-silicon emitter. The epitaxially grown mono-silicon emitter significantly reduces the electrical resistivity of the emitter. A non-dopant impurity such as germanium is added to the base layer to endpoint a dry plasma etch process that is applied to etch the emitter/base layer.

Abstract: A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) procedure is performed to create a layer of thermal oxide over the silicon germanium film. The thickness of the layer of thermal oxide is measured in real time using an interferometer, an ellipsometer, or a spectroscopic ellipsometer. The measured thickness of the layer of thermal oxide is correlated to a germanium concentration of the silicon germanium film using an approximately linear correlation. The correlation enables a value of the germanium concentration in the silicon germanium film to be provided in real time.

Abstract: A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) procedure is performed to create a layer of thermal oxide over the silicon germanium film. The thickness of the layer of thermal oxide is measured in real time using an interferometer, an ellipsometer, or a spectroscopic ellipsometer. The measured thickness of the layer of thermal oxide is correlated to a germanium concentration of the silicon germanium film using an approximately linear correlation. The correlation enables a value of the germanium concentration in the silicon germanium film to be provided in real time.