Patents by Inventor Craig Ransom

Craig Ransom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRUCTURE COMPRISING A BARRIER LAYER OF A TUNGSTEN ALLOY COMPRISING COBALT AND/OR NICKEL
    Publication number: 20080237053
    Abstract: An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; wherein the opening has an underlayer of cobalt and/or nickel therein, barrier layer of an alloy of cobalt and/or nickel; and tungsten is provided.
    Type: Application
    Filed: May 27, 2008
    Publication date: October 2, 2008
    Applicant: International Business Machines Corporation
    Inventors: Panayotis Andricacos, Steven H. Boettcher, Sandra G. Malhotra, Milan Paunovic, Craig Ransom
  • Structure comprising a barrier layer of a tungsten alloy comprising cobalt and/or nickel
    Publication number: 20040108136
    Abstract: An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; wherein the opening has an underlayer of cobalt and/or nickel therein, barrier layer of an alloy of cobalt and/or nickel; and tungsten is provided.
    Type: Application
    Filed: December 4, 2002
    Publication date: June 10, 2004
    Applicant: International Business Machines Corporation
    Inventors: Panayotis Andricacos, Steven H. Boettcher, Sandra G. Malhotra, Milan Paunovic, Craig Ransom
  • Method for improved fabrication of salicide structures
    Patent number: 6475893
    Abstract: A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: November 5, 2002
    Assignee: International Business Machines Corporation
    Inventors: Kenneth J. Giewont, Yun Yu Wang, Russell Arndt, Craig Ransom, Judith Coffin, Anthony Domenicucci, Michael MacDonald, Brian E. Johnson
  • METHOD FOR IMPROVED FABRICATION OF SALICIDE STRUCTURES
    Publication number: 20020142616
    Abstract: A method for preparing a semiconductor material for the formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.
    Type: Application
    Filed: March 30, 2001
    Publication date: October 3, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kenneth J. Giewont, Yun Yu Wang, Russell Arndt, Craig Ransom, Judith Coffin, Anthony Domenicucci, Michael MacDonald, Brian E. Johnson