Patents by Inventor Craig Roderick
Craig Roderick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6790311Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.Type: GrantFiled: October 30, 2001Date of Patent: September 14, 2004Inventors: Kenneth S Collins, Michael Rice, Farahmand E Askarinam, Douglas A Buchberger, Jr., Craig A Roderick
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Publication number: 20040163764Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: ApplicationFiled: February 25, 2004Publication date: August 26, 2004Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6736931Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: GrantFiled: October 2, 2001Date of Patent: May 18, 2004Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6545420Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: June 6, 1995Date of Patent: April 8, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima
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Patent number: 6518195Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: February 15, 2000Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6514376Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material.Type: GrantFiled: March 7, 2000Date of Patent: February 4, 2003Assignee: Applied Materials Inc.Inventors: Kenneth Collins, Michael Rice, Eric Askarinam, Douglas Buchberger, Craig Roderick
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Patent number: 6488807Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.Type: GrantFiled: May 3, 2000Date of Patent: December 3, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6454898Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.Type: GrantFiled: January 11, 2000Date of Patent: September 24, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Michael Rice, Douglas Buchberger, Craig Roderick, Eric Askarinam, Gerhard Schneider, John Trow, Joshua Tsui, Dennis Grimard, Gerald Yin, Robert Wu
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Patent number: 6444085Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.Type: GrantFiled: September 29, 2000Date of Patent: September 3, 2002Assignee: Applied Materials Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6440866Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.Type: GrantFiled: June 16, 2000Date of Patent: August 27, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, David W. Groechel, Gerald Zheyao Yin, Jon Mohn, Craig A. Roderick, Douglas Buchberger, Chan-Lon Yang, Yuen-Kui Wong, Jeffrey Marks, Peter Keswick
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Publication number: 20020096259Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.Type: ApplicationFiled: October 30, 2001Publication date: July 25, 2002Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, Farahmand E. Askarinam, Douglas A. Buchberger, Craig A. Roderick
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Patent number: 6365063Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.Type: GrantFiled: July 9, 1999Date of Patent: April 2, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S Collins, Michael Rice, Farahmand E Askarinam, Douglas A Buchberger, Jr., Craig A Roderick
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Patent number: 6353206Abstract: A plasma system which is to be coupled to a power source, the plasma system including a chamber defining an internal cavity in which a plasma is generated during operation; a coil which during operation couples power from the power source into the plasma within the chamber, the coil having first and second terminals; a first capacitor which is coupled between the first terminal and a reference potential; and a second capacitor connected to the second terminal and through which the power source is coupled to the second terminal.Type: GrantFiled: May 30, 1996Date of Patent: March 5, 2002Assignee: Applied Materials, inc.Inventor: Craig A. Roderick
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Publication number: 20020020499Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: ApplicationFiled: October 2, 2001Publication date: February 21, 2002Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Publication number: 20020004309Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: ApplicationFiled: June 9, 1999Publication date: January 10, 2002Inventors: KENNETH S. COLLINS, CRAIG A. RODERICK, JOHN R. TROW, CHAN-LON YANG, JERRY YUEN-KUI WONG, JEFFREY MARKS, PETER R. KESWICK, DAVID W. GROECHEL, JAY D. PINSON, TETSUYA ISHIKAWA, LAWRENCE CHANG-LAI LEI, MASATO M. TOSHIMA
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Publication number: 20010054483Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.Type: ApplicationFiled: July 9, 1999Publication date: December 27, 2001Inventors: KENNETH S. COLLINS, MICHAEL RICE, FARAHMAND E. ASKARINAM, DOUGLAS A. BUCHBERGER, CRAIG A. RODERICK
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Patent number: 6251792Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: October 10, 1997Date of Patent: June 26, 2001Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6252354Abstract: In an RF plasma reactor including a reactor chamber with a process gas inlet, a workpiece support, an RF signal applicator facing a portion of the interior of the chamber and an RF signal generator having a controllable RF frequency and an RF signal output coupled to an input of the RF signal applicator, the invention tunes the RF signal generator to the plasma-loaded RF signal applicator by sensing an RF parameter at the RF signal generator or at the RF signal applicator and then adjusting the frequency of the RF signal generator so as to optimize the parameter. The invention further controls the RF signal generator output magnitude (power, current or voltage) by optimizing the value of the same RF parameter or another RF parameter. The reactor preferably includes a fixed tuning circuit between the RF signal generator and the RF signal applicator.Type: GrantFiled: November 4, 1996Date of Patent: June 26, 2001Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Craig Roderick, Douglas Buchberger, John Trow, Viktor Shel
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Patent number: 6218312Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.Type: GrantFiled: October 8, 1998Date of Patent: April 17, 2001Assignee: Applied Materials Inc.Inventors: Kenneth S. Collins, Michael Rice, David W. Groechel, Gerald Zheyao Yin, Jon Mohn, Craig A. Roderick, Douglas Buchberger, Chan-Lon Yang, Yuen-Kui Wong, Jeffrey Marks, Peter Keswick
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Patent number: 6165311Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.Type: GrantFiled: May 13, 1996Date of Patent: December 26, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick