Abstract: The present invention provides a process for depositing an oxide coating on an inorganic substrate, including providing an aqueous composition containing a tetraalkylammonium polyoxoanion and hydrogen peroxide; contacting the aqueous composition with an inorganic substrate for a time sufficient to deposit a hydroxide derived from the polyoxoanion on surfaces of the inorganic substrate to form an initially coated inorganic substrate; and heating the initially coated inorganic substrate for a time sufficient to convert the hydroxide to an oxide to form on the inorganic substrate an oxide coating derived from the polyoxoanion. The inorganic substrate may be a ceramic material or a semiconductor material, a glass or other dielectric material, and the ceramic material may be a lithium ion battery cathode material.

Abstract: The present invention provides a process for depositing an oxide coating on an inorganic substrate, including providing an aqueous composition containing a tetraalkylammonium polyoxoanion and lithium hydroxide; contacting the aqueous composition with an inorganic substrate for a time sufficient to deposit a lithium polyoxoanion on surfaces of the inorganic substrate to form an initially coated inorganic substrate; and heating the initially coated inorganic substrate for a time sufficient to convert the lithium polyoxoanion to an oxide to form on the inorganic substrate an oxide coating derived from the polyoxoanion. The inorganic substrate may be a ceramic material or a semiconductor material, a glass or other dielectric material, and the ceramic material may be a lithium ion battery cathode material.

Abstract: The present invention provides a process for depositing an oxide coating on an inorganic substrate, including providing an aqueous composition containing a tetraalkylammonium polyoxoanion and hydrogen peroxide; contacting the aqueous composition with an inorganic substrate for a time sufficient to deposit a hydroxide derived from the polyoxoanion on surfaces of the inorganic substrate to form an initially coated inorganic substrate; and heating the initially coated inorganic substrate for a time sufficient to convert the hydroxide to an oxide to form on the inorganic substrate an oxide coating derived from the polyoxoanion. The inorganic substrate may be a ceramic material or a semiconductor material, a glass or other dielectric material, and the ceramic material may be a lithium ion battery cathode material.

Abstract: The present invention provides a process for depositing an oxide coating on an inorganic substrate, including providing an aqueous composition containing a tetraalkylammonium polyoxoanion and lithium hydroxide; contacting the aqueous composition with an inorganic substrate for a time sufficient to deposit a lithium polyoxoanion on surfaces of the inorganic substrate to form an initially coated inorganic substrate; and heating the initially coated inorganic substrate for a time sufficient to convert the lithium polyoxoanion to an oxide to form on the inorganic substrate an oxide coating derived from the polyoxoanion. The inorganic substrate may be a ceramic material or a semiconductor material, a glass or other dielectric material, and the ceramic material may be a lithium ion battery cathode material.

Abstract: Provided are methods of forming optical components. The methods involves (a) forming over a substrate a layer of a photoimageable composition that includes a hybrid organic-inorganic polymer and a photoactive component, wherein the layer has a first index of refraction and a first dissolution rate; and (b) exposing by multi-photon absorption using actinic radiation a predefined volume of the layer. The volume is caused to have: (i) a second index of refraction which is different than the first index of refraction and/or (ii) a second dissolution rate which is different than the first dissolution rate. The methods have particular applicability in the formation of optical waveguides and other optical components.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent or iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: Resistive materials have resistivities that are axis dependent are provided. Such resistive materials having a resistivity in a first direction and a very different resistivity in an orthogonal direction. These resistive materials are particularly suitable for use as resistors embedded in printed wiring boards.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: Dielectric structures particularly suitable for use in capacitors and having a textured surface are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract: A dielectric composed of a core material between two polymer layers that have permittivity values less than the core material. The polymer layers provide structural integrity for the dielectric. The dielectric can be employed in a capacitor to fine tune the capacitance of the capacitor. The dielectric and the capacitor may have a thickness in the micron range. Accordingly, the dielectric and capacitor provide for the miniaturization of electronic devices. The dielectric may be employed in decoupling capacitors to reduce noise in electronic devices.

Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 &mgr;m and a peak-to-peak wavelength of 2 to 20 &mgr;m.

Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 &mgr;m and a peak-to-peak wavelength of 2 to 20 &mgr;m.

Abstract: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

Abstract: Dielectric structures particularly suitable for use in capacitors and having a textured surface are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

Abstract: A dielectric composed of a core material between two polymer layers that have permittivity values less than the core material. The polymer layers provide structural integrity for the dielectric. The dielectric can be employed in a capacitor to fine tune the capacitance of the capacitor. The dielectric and the capacitor may have a thickness in the micron range. Accordingly, the dielectric and capacitor provide for the miniaturization of electronic devices. The dielectric may be employed in decoupling capacitors to reduce noise in electronic devices.