Abstract: Methods for eliminating artifacts in two-dimensional optical metrology utilizing the interline CCD detectors are based on a dark-subtraction principle. The self-dark subtraction method takes advantage of strong correlation between the noise patterns in illuminated and dark regions within the same image. Image artifacts are removed and the S/N ratio is improved significantly by subtraction of selected dark region of the image from the illuminated one within the same frame. The dark-frame subtraction technique reduces a “smear” effect by applying a digital processing based on subtraction of the dark frame images from the normal light frame images. A combination of these methods significantly improves performance of two-dimensional optical metrology systems such as spectrometers, ellipsometers, beam profile reflectometers/ellipsometers, scatterometers and spectroscopic scatterometers.

Abstract: A broadband ellipsometer is disclosed with an all-refractive optical system for focusing a probe beam on a sample. The ellipsometer includes a broadband light source emitting wavelengths in the UV and visible regions of the spectrum. The change in polarization state of the light reflected from the sample is arranged to evaluate characteristics of a sample. The probe beam is focused onto the sample using a composite lens system formed from materials transmissive in the UV and visible wavelengths and arranged to minimize chromatic aberrations. The spot size on the sample can be less than 3 mm and the aberration is such that the focal shift over the range of wavelengths is less than five percent of the mean focal length of the system.

Abstract: An optical measurement system for evaluating a reference sample, having at least a partially known composition, includes a reference ellipsometer and at least one non-contact optical measurement device. The ellipsometer includes a light generator, an analyzer, and a detector. The light generator generates a beam of quasi-monochromatic light of known wavelength and polarization, which is directed at a non-normal angle of incidence relative to the reference sample. The analyzer creates interference between S and P polarized components in the beam after interaction with the sample. The detector then measures the intensity of the beam, which a processor uses to determine the polarization state of the beam and, subsequently, an optical property of the reference sample. The processor then can calibrate an optical measurement device by comparing a measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

Abstract: Systems and methods for operating an optical measurement system are disclosed which permit measurements to be made more uniformly in regions close the edge of a sample, such as a wafer. An optical measurement system can include a probe beam that is focused to an elliptically shaped spot on the surface of the sample. Improved measurements near the edge of the sample can be obtained by rotating the wafer with respect to the measurement spot to ensure that the short axis of the ellipse is perpendicular to the wafer edge.

Abstract: A broadband ellipsometer is disclosed with an all-refractive optical system for focusing a probe beam on a sample. The ellipsometer includes a broadband light source emitting wavelengths in the UV and visible regions of the spectrum. The change in polarization state of the light reflected from the sample is arranged to evaluate characteristics of a sample. The probe beam is focused onto the sample using a composite lens system formed from materials transmissive in the UV and visible wavelengths and arranged to minimize chromatic aberrations. The spot size on the sample can be less than 3 mm and the aberration is such that the focal shift over the range of wavelengths is less than five percent of the mean focal length of the system.

Abstract: A broadband ellipsometer is disclosed with an all-refractive optical system for focusing a probe beam on a sample. The ellipsometer includes a broadband light source emitting wavelengths in the UV and visible regions of the spectrum. The change in polarization state of the light reflected from the sample is arranged to evaluate characteristics of a sample. The probe beam is focused onto the sample using a composite lens system formed from materials transmissive in the UV and visible wavelengths and arranged to minimize chromatic aberrations. The spot size on the sample is preferably less than 3 mm and the aberration is such that the focal shift over the range of wavelengths is less than five percent of the mean focal length of the system.

Abstract: An optical measurement system for evaluating a reference sample, having at least a partially known composition, includes a reference ellipsometer and at least one non-contact optical measurement device. The ellipsometer includes a light generator, an analyzer, and a detector. The light generator generates a beam of quasi-monochromatic light of known wavelength and polarization, which is directed at a non-normal angle of incidence relative to the reference sample. The analyzer creates interference between S and P polarized components in the beam after interaction with the sample. The detector then measures the intensity of the beam, which a processor uses to determine the polarization state of the beam and, subsequently, an optical property of the reference sample. The processor then can calibrate an optical measurement device by comparing a measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

Abstract: Systems and methods for operating an optical measurement system are disclosed which permit measurements to be made more uniformly in regions close the edge of a sample, such as a wafer. An optical measurement system can include a probe beam that is focused to an elliptically shaped spot on the surface of the sample. Improved measurements near the edge of the sample can be obtained by rotating the wafer with respect to the measurement spot to ensure that the short axis of the ellipse is perpendicular to the wafer edge.

Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer.

Abstract: An x-ray reflectometry system for measuring thin film samples. The system includes an adjustable x-ray source, such that characteristics of an x-ray probe beam output by the x-ray source can be adjusted to improve the resolution of the measurement system. The x-ray probe beam can also be modified to increase the speed of evaluating the thin film sample, for situations where some degree of resolution can be sacrificed. In addition, or alternatively, the system can also provide an adjustable detector position device which allows the position of the detector to be adjusted to increase the resolution of the system, or to reduce the time it takes to evaluate the thin film material.

Abstract: A method for operating an optical measurement system is disclosed which permits measurements to be made more uniformly in regions close the edge of a wafer. The optical measurement system includes a probe beam which is focused to an elliptically shaped spot on the surface of the wafer. Improved measurements near the wafer's edge are obtained by rotating the wafer with respect to the measurement spot to insure that the short axis of the ellipse is perpendicular to the wafer edge.

Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer.

Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer.

Abstract: A method for operating an optical measurement system is disclosed which permits measurements to be made more uniformly in regions close the edge of a wafer. The optical measurement system includes a probe beam which is focused to an elliptically shaped spot on the surface of the wafer. Improved measurements near the wafer's edge are obtained by rotating the wafer with respect to the measurement spot to insure that the short axis of the ellipse is perpendicular to the wafer edge.

Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer.

Abstract: An x-ray reflectometry system for measuring thin film samples. The system includes an adjustable x-ray source, such that characteristics of an x-ray probe beam output by the x-ray source can be adjusted to improve the resolution of the measurement system. The x-ray probe beam can also be modified to increase the speed of evaluating the thin film sample, for situations where some degree of resolution can be sacrificed. In addition, or alternatively, the system can also provide an adjustable detector position device which allows the position of the detector to be adjusted to increase the resolution of the system, or to reduce the time it takes to evaluate the thin film material.