Abstract: A card handling device is configured to arrange one or more cards into sets or hands. The card handling device may have a card receiving area, a card infeed mechanism for delivering cards from the receiving area to a receiver for forming the card sets or hands, and an ejector for ejecting cards to a card dispensing area. The card handling device may utilize a first controller to generate a virtual card structure and correlate read card information therewith for generating hand information, and may utilize a secondary controller to generate card location information for each card for placement of each card in the generated location of the card receiver.

Abstract: A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.

Abstract: A card handling device is configured to arrange one or more cards into sets or hands. The card handling device may have a card receiving area, a card infeed mechanism for delivering cards from the receiving area to a receiver for forming the card sets or hands, and an ejector for ejecting cards to a card dispensing area. The receiving area may have a card engaging movable sidewall. The card receiver may be movable and have vertically spaced dividers which define card receiving pockets. A top of the card dispensing area is located above a top of the card receiving area.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: Embodiments of the present invention are directed to a computer-implemented method for cache eviction. The method includes detecting a first data in a shared cache and a first cache in response to a request by a first processor. The first data is determined to have a mid-level cache eviction priority. A request is detected from a second processor for a same first data as requested by the first processor. However, in this instance, the second processor has indicated that the same first data has a low-level cache eviction priority. The first data is duplicated and loaded to a second cache, however, the data has a low-level cache eviction priority at the second cache.

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

Abstract: Embodiments of the present invention are directed to a computer-implemented method for cache eviction. The method includes detecting a first data in a shared cache and a first cache in response to a request by a first processor. The first data is determined to have a mid-level cache eviction priority. A request is detected from a second processor for a same first data as requested by the first processor. However, in this instance, the second processor has indicated that the same first data has a low-level cache eviction priority. The first data is duplicated and loaded to a second cache, however, the data has a low-level cache eviction priority at the second cache.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: A trap system adapted to trap polyimide or other vapors exiting from a process chamber. The vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location. The condensed vapors accumulate in a liquid trap. A method of condensing polymer vapors in vacuum exit lines of process chambers, where the flow which may have vaporized polymer vapor is cooled to enhance condensation at a chosen location. The liquid trap can be emptied and replaced, resulting in the removal of the condensed liquid. The chamber exit lines are protected from condensation build up.

Abstract: A device and method for alignment of substrates on a substrate support, such as a heated chuck. An alignment ring may be placed over the substrate support to maintain placement and alignment during processing, such as plasma processing. The aligned substrate may then be accessed by a robotic arm, as it is in a pre-determined location. Alignment rings of different interior diameters may be used for different substrate sizes. The alignment rings may be inserted onto and removed from the process oven containing the substrate support through the substrate access port, without the need to fully open the process chamber.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

Abstract: A trap system adapted to trap polyimide or other vapors exiting from a process chamber. The vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location. The condensed vapors accumulate in a liquid trap. A method of condensing polymer vapors in vacuum exit lines of process chambers, where the flow which may have vaporized polymer vapor is cooled to enhance condensation at a chosen location. The liquid trap can be emptied and replaced, resulting in the removal of the condensed liquid. The chamber exit lines are protected from condensation build up.

Abstract: Methods, systems, and apparatuses are disclosed for laser bond inspection of an angled or compact bonded article.