Abstract: A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of deposition plasma power and deposition time. The method also comprises applying the deposition rate model to modify the metal deposition processing to form the metal layer to have a desired thickness.

Abstract: A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.

Abstract: A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.

Abstract: Disclosed herein is a method comprised of forming a metal layer above a structure layer on a workpiece, measuring a thickness of the metal layer, determining, based upon the measured thickness of the metal layer, at least one parameter of an etching process to be performed on the metal layer, and performing the etching process comprised of the determined parameter on the metal layer. Also disclosed is a system comprised of a deposition tool for forming a metal layer above a structure layer on a workpiece, a metrology tool for measuring a thickness of the metal layer, a controller for determining, based upon the measured thickness of the metal layer, at least one parameter of an etch process to be performed on the metal layer, and an etch tool adapted to perform an etch process comprised of the determined parameter on the metal layer.

Abstract: A system for controlling the thickness of a layer of copper in the formation of a semiconductor device is provided. The system is comprised of an electroplate tool, a metrology tool, and a controller. The electroplate tool is capable of depositing a layer of copper on a surface of a semiconductor device. The electroplate tool has at least one parameter that may be varied to control a thickness of the layer of copper. The metrology tool is capable of measuring the thickness of the copper layer and delivering a signal indicative thereof.

Abstract: A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.

Abstract: A system and method for calculating the performance of a cluster tool using a weighted configuration matrix. The system includes a computer system which maintains a database of entities corresponding to semiconductor wafer processing modules in a fab. A user "clusters" the entities, i.e., selects entities to reflect the relationship of the constituent modules physically linked together which form the cluster tool. The user also designates a main module against which the main performance events of the cluster tool, such as begin run and end run, are logged in the database. The computer system configures all of the "up" and "down" state configuration combinations of the cluster tool modules and displays the configurations for the user. The user specifies a weight for each of the configurations based upon an estimate of the performance the cluster tool while in the respective configuration relative to the performance of the cluster tool in a fully operable configuration.