Abstract: Various apparatus, systems, and methods for determining a susceptibility of an infectious agent to an anti-infective are disclosed. In one aspect, a system comprises a well plate, a sensor array lid configured to cover the well plate, and a reader for receiving the well plate covered by the sensor array lid. The well plate comprises wells including test wells comprising an anti-infective and at least one control well devoid of the anti-infective. Each of the wells is configured to receive and contain a sample. The sensor array lid comprises a plurality of sensor units. Each of the sensor units is configured to extend into a well of the well plate. Each of the sensor units comprises an active electrode and a reference electrode used by the reader to detect any changes in the solution characteristics within the wells to determine the susceptibility of the infectious agent to the anti-infective.

Abstract: Various apparatus, systems, and methods for measuring a solution characteristic of a sample comprising microorganisms are disclosed. In one embodiment, a sensor apparatus is disclosed comprising a sample container comprising a sample chamber configured to receive the sample and a reference sensor component comprising a reference conduit having a reference conduit cavity defined therein. The reference conduit cavity can be at least partially filled with a reference buffer gel, buffer solution, or wicking component. A segment of the reference conduit can extend into the sample chamber. A reference electrode material can be positioned at a proximal end of the wicking component or extend partially into the reference conduit cavity. The sensor apparatus can also comprise an active sensor component having an active electrode in fluid contact with the sample. The sample in the sample chamber can be aerated through an aeration port defined along a surface of the sample container.

Abstract: Various apparatus, systems, and methods for measuring a solution characteristic of a sample comprising microorganisms are disclosed. In one embodiment, a sensor apparatus is disclosed comprising a sample container comprising a sample chamber configured to receive the sample and a reference sensor component comprising a reference conduit having a reference conduit cavity defined therein. The reference conduit cavity can be at least partially filled with a reference buffer gel, buffer solution, or wicking component. A segment of the reference conduit can extend into the sample chamber. A reference electrode material can be positioned at a proximal end of the wicking component or extend partially into the reference conduit cavity. The sensor apparatus can also comprise an active sensor component having an active electrode in fluid contact with the sample. The sample in the sample chamber can be aerated through an aeration port defined along a surface of the sample container.

Abstract: Various apparatus, systems, and methods for measuring a solution characteristic of a sample comprising microorganisms are disclosed. The measured solution characteristic can be used to generate a standardized inoculum. In one embodiment, a sensor apparatus is disclosed comprising a sample container having a chamber lateral wall surrounding a chamber cavity configured receive the sample, a reference sensor fabricated as a container cap and comprising a reference electrode material and, and an active sensor made of a substrate covered in part by an active electrode layer. The active sensor can be coupled to at least part of the chamber lateral wall at a window opening defined along the chamber lateral wall. The solution characteristic can be measured using a reader configured to electrically couple to the sensor apparatus and measure the solution characteristic based on a potential difference between the active sensor and the active sensor.

Abstract: Various apparatus, systems, and methods for measuring a solution characteristic of a sample comprising microorganisms are disclosed. In one embodiment, a sensor apparatus is disclosed comprising a sample container comprising a sample chamber configured to receive the sample and a reference sensor component comprising a reference conduit having a reference conduit cavity defined therein. The reference conduit cavity can be at least partially filled with a reference buffer gel, buffer solution, or wicking component. A segment of the reference conduit can extend into the sample chamber. A reference electrode material can be positioned at a proximal end of the wicking component or extend partially into the reference conduit cavity. The sensor apparatus can also comprise an active sensor component having an active electrode in fluid contact with the sample. The sample in the sample chamber can be aerated through an aeration port defined along a surface of the sample container.

Abstract: A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided. A plurality of transistors are formed on the silicon including surface in at least one PMOS region and at least one NMOS region, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region. Pre-silicide cleaning removes oxide from the exposed p-type surface regions and exposed n-type surface regions. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and exposed n-type surface regions. Unreacted metal of the metal layer is stripped.

Abstract: A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided. A plurality of transistors are formed on the silicon including surface in at least one PMOS region and at least one NMOS region, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region. Pre-silicide cleaning removes oxide from the exposed p-type surface regions and exposed n-type surface regions. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and exposed n-type surface regions. Unreacted metal of the metal layer is stripped.

Abstract: A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region on the silicon including surface. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and n-type surface regions.

Abstract: A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region on the silicon including surface. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and n-type surface regions.