Patents by Inventor Cris Ugolini

Cris Ugolini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Er doped III-nitride materials and devices synthesized by MOCVD
    Patent number: 8227328
    Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: July 24, 2012
    Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada
  • ER Doped III-Nitride Materials And Devices Synthesized by MOCVD
    Publication number: 20100320443
    Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
    Type: Application
    Filed: August 24, 2007
    Publication date: December 23, 2010
    Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada