Patents by Inventor Cristian Papusoi

Cristian Papusoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10706883
    Abstract: Perpendicular magnetic recording media including a carbon grain isolation initiation layer for reducing intergranular exchange coupling in the recording layer are provided. In one such case, the media includes a substrate, a plurality of underlayers on the substrate, a grain isolation initiation layer (GIIL) on the plurality of underlayers, the GIIL including C, a metal, and an oxide, and a magnetic recording layer directly on the GIIL and including a non-ordered structure. In another case, a method of fabricating such magnetic media is provided.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: July 7, 2020
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Sylvia Helena Florez, Cristian Papusoi, Mrugesh Desai, Prakash Mani
  • Publication number: 20190122696
    Abstract: Perpendicular magnetic recording media including a carbon grain isolation initiation layer for reducing intergranular exchange coupling in the recording layer are provided. In one such case, the media includes a substrate, a plurality of underlayers on the substrate, a grain isolation initiation layer (GIIL) on the plurality of underlayers, the GIIL including C, a metal, and an oxide, and a magnetic recording layer directly on the GIIL and including a non-ordered structure. In another case, a method of fabricating such magnetic media is provided.
    Type: Application
    Filed: October 20, 2017
    Publication date: April 25, 2019
    Inventors: Sylvia Helena Florez, Cristian Papusoi, Mrugesh Desai, Prakash Mani
  • Patent number: 9275669
    Abstract: The present disclosure generally relates to a PMR media for use in a HDD. The PMR media has an amorphous ferri-magnetic material layer disposed within the capping structure. The amorphous ferri-magnetic material layer reduces the noise. The amorphous ferri-magnetic material layer may be disposed between capping layer or on top of the capping layers. Additionally, the amorphous ferri-magnetic material layer may contain Tb.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: March 1, 2016
    Assignee: WD Media, LLC
    Inventors: Emad Girgis, Prakash Mani, Cristian Papusoi, Mrugesh Desai, Ramamurthy Acharya
  • Patent number: 8279666
    Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: October 2, 2012
    Assignees: Institut Polytechnique de Grenoble, Le Centre National de la Recherche Scientifique, Le Commissariat a l'Energie Atomique et aux Energies Altenatives
    Inventors: Bernard Dieny, Cristian Papusoi, Ursula Ebels, Dimitri Houssameddine, Liliana Buda-Prejbeanu, Ricardo Sousa
  • Publication number: 20110007560
    Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.
    Type: Application
    Filed: May 26, 2010
    Publication date: January 13, 2011
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Bernard Dieny, Cristian Papusoi, Ursula Ebels, Dimitri Houssameddine, Liliana Buda-Prejbeanu, Ricardo Sousa