Abstract: There is provided a light detector having a light-receiving unit including a light-receiving element of a photon-counting type that receives incident light and outputs a binary pulse indicating presence or absence of photon incidence, and an integrating unit that calculates an output value in which a total of pulse widths of pulses is integrated over a measurement period.

Abstract: An optical rangefinder based on time-of-flight measurement, radiates pulsed light toward an object (70), and receives reflected light from the object, the receiver operating in a photon counting mode, so as to generate a pulse for a detected photon. There is a variable probability of a photon detection on the receiver, and a controller (370, 380, 390; 365, 470, 475, 380, 390; 570, 580, 590, 390) controls the photon detection probability of the receiver, based on a light level. By controlling the detection probability according to a light level, the receiver can have an increased dynamic range, and without the expense of using optical components. This can apply even while detecting very weak signals since the receiver can still be in a photon counting mode while the detection probability is controlled. The light level can be indicated by an output of the receiver itself, or by another detector external to the receiver.

Abstract: A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

Abstract: A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.

Abstract: A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

Abstract: The present invention concerns a time-of-flight based imaging system having a photon emitter used as an illumination source, a photon sensor, and an electronic system for delivering a signal depending on the reception time of photons by said photon detector. The electronic display is used as the photonic source.

Abstract: There is provided a light detector having a light-receiving unit including a light-receiving element of a photon-counting type that receives incident light and outputs a binary pulse indicating presence or absence of photon incidence, and an integrating unit that calculates an output value in which a total of pulse widths of pulses is integrated over a measurement period.

Abstract: Arrangement (10) for measuring the distance to an object, comprising: a photonic source for illuminating said object using a continuous modulated photonic wave, a solid-state image sensor, comprising an array of avalanche photodiodes and a plurality of circuits for processing signals output by said avalanche photodiodes to yield data depending on the photonic wave reflected by said object onto said photodiodes. The circuit may comprise a multiplexer at the pixel level arranged so as to accumulate the signal output by the avalanche photodiode during different sub-periods in different storage devices.

Abstract: A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.

Abstract: Integrated circuit (1) comprising: an array of single photon avalanche diodes (SPADs), a plurality of read-out circuits, each SPADs being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and/or a digital asynchronous counter, wherein a plurality of SPADs are coupled to one single read-out circuit. The read-out circuit may comprise a transformer for decoupling the SPAD from other parts of said read-out circuit.

Abstract: An optical rangefinder based on time-of-flight measurement, radiates pulsed light toward an object (70), and receives reflected light from the object, the receiver operating in a photon counting mode, so as to generate a pulse for a detected photon. There is a variable probability of a photon detection on the receiver, and a controller (370, 380, 390; 365, 470, 475, 380, 390; 570, 580, 590, 390) controls the photon detection probability of the receiver, based on a light level. By controlling the detection probability according to a light level, the receiver can have an increased dynamic range, and without the expense of using optical components. This can apply even while detecting very weak signals since the receiver can still be in a photon counting mode while the detection probability is controlled. The light level can be indicated by an output of the receiver itself, or by another detector external to the receiver.

Abstract: A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

Abstract: The present invention concerns a time-of-flight based imaging system comprising a photon emitter used as an illumination source; a photon sensor (6); an electronic system for delivering a signal depending on the reception time of photons by said photon detector, characterized in that an electronic display (2) is used as said photonic source.

Abstract: Integrated circuit (1) comprising: an array of single photon avalanche diodes (SPADs), a plurality of read-out circuits, each SPADs being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and/or a digital asynchronous counter, wherein a plurality of SPADs are coupled to one single read-out circuit. The read-out circuit may comprise a transformer for decoupling the SPAD from other parts of said read-out circuit.

Abstract: A method for controlling the spectral response of light sensitive semiconductor elements in an array (8) using an electric control signal (Vop) applied to said semiconductor elements. The light sensitive semiconductor elements could be a single photon avalanche diode (81) operating in Geiger mode. An image sensor has at least one light sensitive semiconductor elements and a circuit for applying a control voltage (Vop) to said semiconductor element so as to change its spectral response. Without being limiting, the sensor could be part of a digital camera, video camera, 3D image sensors, scanner, video telephone, autofocus system, medical image acquisition system, etc.

Abstract: An integrated circuit (1) has an array of single photon avalanche diodes (SPADS), a plurality of read-out circuits, each SPADS being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and/or a digital asynchronous counter. The plurality of SPADS are coupled to one single read-out circuit. The read-out circuit may have a transformer for decoupling the SPAD from other parts of the read-out circuit.

Abstract: Transducer (24, 240, 241) for reading information stored 1n an optical record carrier (1), comprising at least one solid-state single photon detector, for example a single photon avalanche diode (24) for acquisition of a 2D or 3D image of at least a portion of the optical record carrier.

Abstract: An integrated imager circuit having a monolithic array of single photon avalanche diodes (SPADs) for capturing an image of a scene when said scene is hit by an optical pulse. The array has a plurality of SPADs connected to 2D readout circuits which determines the intensity of the light reflected by the scene by counting the number of photons received by the SPADs during a period of time. A plurality of SPADs connected to 3D readout circuits determines the distance to the scene by determining the elapsed time between the emission of each pulse and reception of the corresponding reflected photons.

Abstract: Arrangement (10) for measuring the distance to an object, comprising: a photonic source for illuminating said object using a continuous modulated photonic wave, a solid-state image sensor, comprising an array of avalanche photodiodes and a plurality of circuits for processing signals output by said avalanche photodiodes to yield data depending on the photonic wave reflected by said object onto said photodiodes. The circuit may comprise a multiplexer at the pixel level arranged so as to accumulate the signal output by the avalanche photodiode during different sub-periods in different storage devices.

Abstract: An integrated circuit (1) has an array of single photon avalanche diodes (SPADS), a plurality of read-out circuits, each SPADS being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and/or a digital asynchronous counter. The plurality of SPADS are coupled to one single read-out circuit. The read-out circuit may have a transformer for decoupling the SPAD from other parts of the read-out circuit.