Patents by Inventor Cristina BESLEAGA STAN
Cristina BESLEAGA STAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230360701Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: July 17, 2023Publication date: November 9, 2023Applicant: Cyberswarm, INC.Inventors: Viorel-Georgel DUMITRU, Cristina Besleaga stan, Alin Velea, Aurelian-Catalin Galca
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Patent number: 11705198Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: November 19, 2021Date of Patent: July 18, 2023Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galea
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Publication number: 20220343974Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin GALCA
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Patent number: 11386953Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: GrantFiled: October 22, 2019Date of Patent: July 12, 2022Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Publication number: 20220076747Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: November 19, 2021Publication date: March 10, 2022Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin Galca
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Patent number: 11183240Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: January 26, 2021Date of Patent: November 23, 2021Assignee: CYBERSWARM, INCInventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Publication number: 20210151108Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: January 26, 2021Publication date: May 20, 2021Applicant: CYBERSWARM, INCInventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin Galca
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Patent number: 10902914Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: June 4, 2019Date of Patent: January 26, 2021Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Publication number: 20200126614Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: ApplicationFiled: October 22, 2019Publication date: April 23, 2020Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin GALCA
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Publication number: 20190378570Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: June 4, 2019Publication date: December 12, 2019Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin Galca
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Publication number: 20190378878Abstract: A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided.Type: ApplicationFiled: June 5, 2019Publication date: December 12, 2019Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin GALCA