Patents by Inventor Cristina Chu
Cristina Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10957850Abstract: A method for fabricating a semiconductor device includes forming a first encapsulation layer along the device, including forming the first encapsulation layer along a memory device region associated with a memory device, forming an intermediate layer on the first encapsulation layer to enable etch endpoint detection and endpoint-based process control for encapsulation layer etch back, and forming a second encapsulation layer on the intermediate layer.Type: GrantFiled: October 4, 2018Date of Patent: March 23, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ashim Dutta, Isabel Cristina Chu, Son Nguyen, Michael Rizzolo, John C. Arnold
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Patent number: 10832945Abstract: Techniques to improve CD width and depth uniformity between features with different layout densities are provided. In one aspect, a method of forming a contact structure includes: patterning features in different regions of a dielectric at different layout densities whereby, due to etch loading effects, the features are patterned to different depths in the dielectric and have different bottom dimensions; depositing a sacrificial spacer into/lining the features whereby some of the features are pinched-off by the sacrificial spacer; opening up the sacrificial spacer at bottoms of one or more of the features that are not pinched-off by the sacrificial spacer; selectively extending the one or more features in the dielectric, such that the one or more features have a discontinuous taper with a stepped sidewall profile; removing the sacrificial spacer; and filling the features with a conductive material to form the contact structure. A contact structure is also provided.Type: GrantFiled: February 15, 2019Date of Patent: November 10, 2020Assignee: International Business Machines CorporationInventors: Nicole Saulnier, Indira Seshadri, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie, Isabel Cristina Chu, Hosadurga Shobha, Ekmini A. De Silva
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Publication number: 20200266100Abstract: Techniques to improve CD width and depth uniformity between features with different layout densities are provided. In one aspect, a method of forming a contact structure includes: patterning features in different regions of a dielectric at different layout densities whereby, due to etch loading effects, the features are patterned to different depths in the dielectric and have different bottom dimensions; depositing a sacrificial spacer into/lining the features whereby some of the features are pinched-off by the sacrificial spacer; opening up the sacrificial spacer at bottoms of one or more of the features that are not pinched-off by the sacrificial spacer; selectively extending the one or more features in the dielectric, such that the one or more features have a discontinuous taper with a stepped sidewall profile; removing the sacrificial spacer; and filling the features with a conductive material to form the contact structure. A contact structure is also provided.Type: ApplicationFiled: February 15, 2019Publication date: August 20, 2020Inventors: Nicole Saulnier, Indira Seshadri, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie, Isabel Cristina Chu, Hosadurga Shobha, Ekmini A. De Silva
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Patent number: 10692925Abstract: A method for fabricating a semiconductor device includes forming one or more encapsulation spacers each about respective ones of one more memory pillar elements to have a geometry, including forming each encapsulation spacer to have a footing of at least about twice a critical dimension of its corresponding pillar, and depositing dielectric material on the one or more memory pillar elements and the one or more encapsulation spacers to form an interlayer dielectric free of voids based on the geometry.Type: GrantFiled: October 12, 2018Date of Patent: June 23, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Rizzolo, Theodorus E. Standaert, Isabel Cristina Chu, Chih-Chao Yang, Son Nguyen
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Patent number: 10672618Abstract: Embodiments of systems and methods for patterning features in tantalum nitride (TaN) are described. In an embodiment, a method may include receiving a substrate comprising a TaN layer. The method may also include etching the substrate to expose at least a portion of the TaN layer. Additionally, the method may include performing a passivation process to reduce lateral etching of the TaN layer. The method may further include etching the TaN layer to form a feature therein, wherein the passivation process is controlled to meet one or more target passivation objectives.Type: GrantFiled: July 11, 2018Date of Patent: June 2, 2020Assignee: International Business Machines CorporationInventors: Vinh Luong, Isabel Cristina Chu, Ashim Dutta
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Publication number: 20200119089Abstract: A method for fabricating a semiconductor device includes forming one or more encapsulation spacers each about respective ones of one more memory pillar elements to have a geometry, including forming each encapsulation spacer to have a footing of at least about twice a critical dimension of its corresponding pillar, and depositing dielectric material on the one or more memory pillar elements and the one or more encapsulation spacers to form an interlayer dielectric free of voids based on the geometry.Type: ApplicationFiled: October 12, 2018Publication date: April 16, 2020Inventors: Michael Rizzolo, Theodorus E. Standaert, Isabel Cristina Chu, Chih-Chao Yang, Son Nguyen
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Patent number: 10622250Abstract: Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.Type: GrantFiled: February 26, 2019Date of Patent: April 14, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Gauri Karve, Fee Li Lie, Nicole Adelle Saulnier, Indira Seshadri, Hosadurga Shobha
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Publication number: 20200111951Abstract: A method for fabricating a semiconductor device includes forming a first encapsulation layer along the device, including forming the first encapsulation layer along a memory device region associated with a memory device, forming an intermediate layer on the first encapsulation layer to enable etch endpoint detection and endpoint-based process control for encapsulation layer etch back, and forming a second encapsulation layer on the intermediate layer.Type: ApplicationFiled: October 4, 2018Publication date: April 9, 2020Inventors: Ashim Dutta, Isabel Cristina Chu, Son Nguyen, Michael Rizzolo, John C. Arnold
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Publication number: 20190189503Abstract: Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.Type: ApplicationFiled: December 19, 2017Publication date: June 20, 2019Inventors: Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Gauri Karve, Fee Li Lie, Nicole Adelle Saulnier, Indira Seshadri, Hosadurga Shobha
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Publication number: 20190189504Abstract: Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.Type: ApplicationFiled: February 26, 2019Publication date: June 20, 2019Inventors: Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Gauri Karve, Fee Li Lie, Nicole Adelle Saulnier, Indira Seshadri, Hosadurga Shobha
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Patent number: 10312140Abstract: Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.Type: GrantFiled: December 19, 2017Date of Patent: June 4, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Gauri Karve, Fee Li Lie, Nicole Adelle Saulnier, Indira Seshadri, Hosadurga Shobha
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Publication number: 20190096672Abstract: Embodiments of systems and methods for patterning features in tantalum nitride (TaN) are described. In an embodiment, a method may include receiving a substrate comprising a TaN layer. The method may also include etching the substrate to expose at least a portion of the TaN layer. Additionally, the method may include performing a passivation process to reduce lateral etching of the TaN layer. The method may further include etching the TaN layer to form a feature therein, wherein the passivation process is controlled to meet one or more target passivation objectives.Type: ApplicationFiled: July 11, 2018Publication date: March 28, 2019Inventors: Vinh Luong, Isabel Cristina Chu, Ashim Dutta
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Patent number: 5330448Abstract: This invention relates to a method and apparatus for transferring a selected fluid in a selected direction to and from a selected body area of a medical patient. More particularly, this invention involves a surgically implanted catheter which is sealed at its proximal end with a material which may be repeatedly punctured by a needle and which reseals when the needle is removed. A needle attached through tubing to a suitable source or sink of the fluid pierces the seal and is latched thereto by suitable means. A noninvasive pump is provided to maintain a desired flow rate. To enhance seal life, a disposable seal portion may be provided having a needle which pierces the seal at the end of the catheter and is latched thereto and having a seal at its proximal end which may be pierced by the needle attached to the source or sink of fluid.Type: GrantFiled: August 24, 1992Date of Patent: July 19, 1994Inventor: Cristina Chu