Abstract: A process kit comprises a ring assembly that is placed about a substrate support in a substrate processing chamber to reduce deposition of process deposits on the chamber components and on an overhang edge of the substrate. The process kit includes a deposition ring, cover ring, and anti-lift bracket, and can also include a unitary shield. A target is also described.

Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate comprises a backside surface having a plurality of concentric circular grooves and a plurality of arcuate channels which intersect the circular grooves. The sputtering target can be positioned abutting a heat exchanger housing which holds heat transfer fluid and a plurality of rotatable magnets.

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate comprises a backside surface having a plurality of concentric circular grooves and a plurality of arcuate channels which intersect the circular grooves. The sputtering target can be positioned abutting a heat exchanger housing which holds heat transfer fluid and a plurality of rotatable magnets.

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.