Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.

Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

Abstract: MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.

Abstract: The present disclosure concerns a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction comprising a synthetic storage layer; a sense layer having a sense magnetization that is reversible; and a tunnel barrier layer between the sense layer and the storage layer; wherein a net local magnetic stray field couples the storage layer with the sense layer; and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell. The disclosed MRAM cell can be written and read with lower consumption in comparison to conventional MRAM cells.