Patents by Inventor Csaba Buday

Csaba Buday has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Measuring semiconductor doping using constant surface potential corona charging
    Patent number: 10969370
    Abstract: An example method of characterizing a semiconductor sample includes measuring an initial value, Vin, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V0) of 2V or less, and depositing a monitored amount of corona charge (?Q1) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V1, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (?V1=V1?V0), and determining the first capacitance value C1=?Q1/?V1, and characterizing the semiconductor sample based on V0, V1, ?V1, ?Q1 and C1.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: April 6, 2021
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Jacek Lagowski, Marshall Wilson, Alexandre Savtchouk, Carlos Almeida, Csaba Buday
  • Measuring semiconductor doping using constant surface potential corona charging
    Publication number: 20160356750
    Abstract: An example method of characterizing a semiconductor sample includes measuring an initial value, Vin, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V0) of 2V or less, and depositing a monitored amount of corona charge (?Q1) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V1, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (?V1=V1?V0), and determining the first capacitance value C1=?Q1/?V1, and characterizing the semiconductor sample based on V0, V1, ?V1, ?Q1 and C1.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 8, 2016
    Inventors: Jacek Lagowski, Marshall Wilson, Alexandre Savtchouk, Carlos Almeida, Csaba Buday