Abstract: A process for fabricating a monocrystalline silicon micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property; the second conducting property is reverse with respect to the first conducting property. A domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. A CMOS circuit element as well as a portion of the domain are covered with a protecting layer. Front-side isotropic porous Si-etching from the exposed surface of the domain continues until the portion that will carry the micromechanical element becomes underetched. A porous Si sacrificial layer is created which at least partially encloses the portion. Then the exposed surface of the porous Si sacrificial layer is passivated by applying a metallic thin film thereon.

Abstract: The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer.